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Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Myllynen, Antti
dc.contributor.author Sadi, Toufik
dc.contributor.author Oksanen, Jani
dc.date.accessioned 2019-05-06T09:12:38Z
dc.date.available 2019-05-06T09:12:38Z
dc.date.issued 2019-03-01
dc.identifier.citation Myllynen , A , Sadi , T & Oksanen , J 2019 , ' Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping ' , Optical and Quantum Electronics , vol. 51 , no. 3 , 90 , pp. 1-8 . https://doi.org/10.1007/s11082-019-1806-z en
dc.identifier.issn 0306-8919
dc.identifier.other PURE UUID: 5dcb3c16-d463-4c0b-a7c8-08deb15524f1
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/5dcb3c16-d463-4c0b-a7c8-08deb15524f1
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85063062089&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/32888286/Myllynen2019_Article_Diffusion_drivenGaInPGaAsLight.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/37674
dc.description | openaire: EC/H2020/638173/EU//iTPX
dc.description.abstract Diffusion-driven charge transport (DDCT) in III–V light-emitting diodes (LEDs) can enable unconventional optoelectronic devices and functionality by fundamentally changing device design and the current injection principle. In our recent study, an AlGaAs/GaAs DDCT–LED consisting of an array of lateral heterojunctions was studied for large-area applications at high powers. Here, we investigate the current spreading and recombination uniformity of a modulation doped GaInP/GaAs DDCT–LED. In particular, we analyze how the background doping of the lower GaInP cladding layer (CL) and the GaAs substrate changes the carrier distribution within the active region of the device. Our charge transport simulations based on the drift-diffusion current and continuity equations predict that modulation doping by a p-doped CL provides much higher recombination uniformity at high powers compared to an n-doped CL. Most importantly, improved current spreading is achieved while maintaining excellent device performance. en
dc.format.extent 1-8
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Springer New York
dc.relation info:eu-repo/grantAgreement/EC/H2020/638173/EU//iTPX
dc.relation.ispartofseries Optical and Quantum Electronics en
dc.relation.ispartofseries Volume 51, issue 3 en
dc.rights openAccess en
dc.title Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Neuroscience and Biomedical Engineering
dc.subject.keyword Current spreading
dc.subject.keyword Diffusion-driven charge transport (DDCT)
dc.subject.keyword Lateral heterojunction (LHJ)
dc.subject.keyword Light-emitting diode (LED)
dc.subject.keyword Modulation doping
dc.identifier.urn URN:NBN:fi:aalto-201905062794
dc.identifier.doi 10.1007/s11082-019-1806-z
dc.type.version publishedVersion

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