Atomic Layer Deposition of Conducting CuS Thin Films from Elemental Sulfur

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en Tripathi, Tripurari S. Lahtinen, Jouko Karppinen, Maarit 2019-04-02T06:58:05Z 2019-04-02T06:58:05Z 2018-05
dc.identifier.citation Tripathi , T S , Lahtinen , J & Karppinen , M 2018 , ' Atomic Layer Deposition of Conducting CuS Thin Films from Elemental Sulfur ' Advanced Materials Interfaces , vol. 5 , no. 9 , 1701366 . en
dc.identifier.issn 2196-7350
dc.identifier.other PURE UUID: e1c4228a-f845-4537-890c-864a34c68b5a
dc.identifier.other PURE ITEMURL:
dc.identifier.other PURE LINK:
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dc.description.abstract A facile, yet precisely controlled and efficient atomic layer deposition (ALD) process is reported for high-quality copper(II) sulfide thin films based on elemental solid sulfur as the source for sulfur; Cu(acac)2 (acac: acetylacetonate) is used as the copper precursor. In the deposition temperature range as low as 140-160 °C, the process proceeds in an essentially ideal ALD manner and yields single-phase CuS thin films with appreciably high growth rate of ≈4 Å per cycle. When the deposition temperature is increased above 160 °C the growth rate considerably increases and flake-like nanostructures evolve. All the as-deposited films are crystalline, highly conducting, and specularly reflecting. Seebeck coefficient measurements confirm the p-type conducting nature of the films. The direct optical bandgap as determined from UV-vis spectroscopic measurements varies in the range of 2.40-2.54 eV, depending on the deposition temperature. en
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher WILEY-BLACKWELL
dc.relation.ispartofseries Advanced Materials Interfaces en
dc.relation.ispartofseries Volume 5, issue 9 en
dc.rights openAccess en
dc.subject.other Mechanics of Materials en
dc.subject.other Mechanical Engineering en
dc.subject.other 215 Chemical engineering en
dc.title Atomic Layer Deposition of Conducting CuS Thin Films from Elemental Sulfur en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Chemistry and Materials Science
dc.contributor.department Department of Applied Physics
dc.contributor.department Inorganic Materials Chemistry
dc.subject.keyword Atomic layer deposition
dc.subject.keyword Copper(II) sulfide
dc.subject.keyword Sulfur
dc.subject.keyword Thin film
dc.subject.keyword Mechanics of Materials
dc.subject.keyword Mechanical Engineering
dc.subject.keyword 215 Chemical engineering
dc.identifier.urn URN:NBN:fi:aalto-201904022528
dc.identifier.doi 10.1002/admi.201701366
dc.type.version acceptedVersion info:eu-repo/date/embargoEnd/2019-02-09

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