Atomic layer deposition of p-type semiconducting thin films: a review

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en Tripathi, Tripurari Karppinen, Maarit 2019-04-02T06:57:54Z 2019-04-02T06:57:54Z 2017-12-22
dc.identifier.citation Tripathi , T & Karppinen , M 2017 , ' Atomic layer deposition of p-type semiconducting thin films: a review ' Advanced Materials Interfaces , vol. 4 , no. 24 , 1700300 . en
dc.identifier.issn 2196-7350
dc.identifier.other PURE UUID: de75c04c-b1de-4530-9339-444d42796eb5
dc.identifier.other PURE ITEMURL:
dc.identifier.other PURE LINK:
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dc.description.abstract Semiconductors such as elemental silicon allowing both p-type and n-type doping are the backbone of the current microelectronics industry, while the continuous progress in fabrication techniques has been the key for ever-increasing integration density and device miniaturization. Similarly, in the strongly emerging field of transparent electronics both p-type and n-type compound semiconductors are needed that moreover should be transparent within the entire visible spectral range. Atomic layer deposition (ALD) has been the thin-film deposition method of choice for a number of challenging applications in microelectronics, and it would also be a highly relevant technology for transparent electronics. Currently the appropriate p-type semiconducting compounds are far outnumbered by the n-type compounds. Hence there is an obvious search for high-quality thin films of new p-type compound semiconductors. This is clearly seen in the increasing number of ALD papers published annualy on p-type semiconducting materials. In this overview the current state of research in the field is briefly presented; the ALD processes so far developed for the various p-type (transparent) conducting material candidates are summarized, and the most prominent electrical transport and optical properties achieved for these thin films are highlighted. en
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher WILEY-BLACKWELL
dc.relation.ispartofseries Advanced Materials Interfaces en
dc.relation.ispartofseries Volume 4, issue 24 en
dc.rights openAccess en
dc.subject.other Mechanics of Materials en
dc.subject.other Mechanical Engineering en
dc.subject.other 116 Chemical sciences en
dc.title Atomic layer deposition of p-type semiconducting thin films: a review en
dc.type A2 Katsausartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Chemistry and Materials Science
dc.subject.keyword atomic layer deposition
dc.subject.keyword p-type semiconductors
dc.subject.keyword thin films
dc.subject.keyword transparent conducting oxides
dc.subject.keyword Mechanics of Materials
dc.subject.keyword Mechanical Engineering
dc.subject.keyword 116 Chemical sciences
dc.identifier.urn URN:NBN:fi:aalto-201904022524
dc.identifier.doi 10.1002/admi.201700300
dc.type.version acceptedVersion

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