Reversible Photoswitching Function in Atomic/Molecular-Layer-Deposited ZnO

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en Khayyami, Aida Karppinen, Maarit 2019-02-25T08:42:04Z 2019-02-25T08:42:04Z 2018
dc.identifier.citation Khayyami , A & Karppinen , M 2018 , ' Reversible Photoswitching Function in Atomic/Molecular-Layer-Deposited ZnO : Azobenzene Superlattice Thin Films ' Chemistry of Materials , vol. 30 , no. 17 , pp. 5904-5911 . en
dc.identifier.issn 0897-4756
dc.identifier.issn 1520-5002
dc.identifier.other PURE UUID: 217be22f-79f7-47d2-ae96-7371845e4f28
dc.identifier.other PURE ITEMURL:
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dc.description | openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT
dc.description.abstract We report new types of reversibly photoresponsive ZnO:azobenzene superlattice thin films fabricated through atomic/molecular-layer deposition (ALD/MLD) from diethylzinc, water, and 4,4′-azobenzene dicarboxylic acid precursors. In these ultrathin films, crystalline ZnO layers are interspersed with monomolecular photoactive azobenzene dicarboxylate layers. The thickness of the individual ZnO layers is precisely controlled by the number (m) of ALD cycles applied between two subsequent MLD cycles for the azobenzene layers; in our {[(Zn-O)m+(Zn-O2-C-C6H4-N=N-C6H4-C-O2)]n+(Zn-O)m} samples, m ranges from 0 to 240. The photoresponsive behavior of the films is demonstrated with ultraviolet-visible spectroscopy; all the films are found to be photoreactive upon 360 nm irradiation, the kinetics of the resultant trans-cis photoisomerization somewhat depending on the superlattice structure. The reversibility of the photoisomerization reaction is then confirmed with a subsequent thermal treatment. Our work thus provides proof-of-concept evidence of the suitability of the ALD/MLD technology for the implementation of photoactive moieties such as azobenzene within an inorganic matrix as an attractive new methodology for creating novel light-switchable functional materials. en
dc.format.extent 5904-5911
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher American Chemical Society ACS
dc.relation info:eu-repo/grantAgreement/EC/FP7/339478/EU//LAYERENG-HYBMAT
dc.relation.ispartofseries Chemistry of Materials en
dc.relation.ispartofseries Volume 30, issue 17 en
dc.rights openAccess en
dc.subject.other Chemistry(all) en
dc.subject.other Chemical Engineering(all) en
dc.subject.other Materials Chemistry en
dc.subject.other 221 Nanotechnology en
dc.title Reversible Photoswitching Function in Atomic/Molecular-Layer-Deposited ZnO en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Chemistry and Materials Science
dc.subject.keyword Chemistry(all)
dc.subject.keyword Chemical Engineering(all)
dc.subject.keyword Materials Chemistry
dc.subject.keyword 221 Nanotechnology
dc.identifier.urn URN:NBN:fi:aalto-201902251827
dc.identifier.doi 10.1021/acs.chemmater.8b01833

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