Simulation of the impact of ionized impurity scattering on the total mobility in si nanowire transistors

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en Sadi, Toufik Medina-Bailon, Cristina Nedjalkov, Mihail Lee, Jaehyun Badami, Oves Berrada, Salim Carrillo-Nunez, Hamilton Georgiev, Vihar Selberherr, Siegfried Asenov, Asen 2019-01-30T15:11:23Z 2019-01-30T15:11:23Z 2019-01-02
dc.identifier.citation Sadi , T , Medina-Bailon , C , Nedjalkov , M , Lee , J , Badami , O , Berrada , S , Carrillo-Nunez , H , Georgiev , V , Selberherr , S & Asenov , A 2019 , ' Simulation of the impact of ionized impurity scattering on the total mobility in si nanowire transistors ' Materials , vol. 12 , no. 1 , 124 . en
dc.identifier.issn 1996-1944
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dc.description | openaire: EC/H2020/688101/EU//SUPERAID7
dc.description.abstract Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulation methods to provide deeper insight into NWTs' physics and operation, and unlock the devices' technological potential. One simulation approach that delivers reliable mobility values at low-field near-equilibrium conditions is the combination of the quantum confinement effects with the semi-classical Boltzmann transport equation, solved within the relaxation time approximation adopting the Kubo-Greenwood (KG) formalism, as implemented in this work. We consider the most relevant scattering mechanisms governing intraband and multi-subband transitions in NWTs, including phonon, surface roughness and ionized impurity scattering, whose rates have been calculated directly from the Fermi's Golden rule. In this paper, we couple multi-slice Poisson-Schrödinger solutions to the KG method to analyze the impact of various scattering mechanisms on the mobility of small diameter nanowire transistors. As demonstrated here, phonon and surface roughness scattering are strong mobility-limiting mechanisms in NWTs. However, scattering from ionized impurities has proved to be another important mobility-limiting mechanism, being mandatory for inclusion when simulating realistic and doped nanostructures, due to the short range Coulomb interaction with the carriers. We also illustrate the impact of the nanowire geometry, highlighting the advantage of using circular over square cross section shapes. en
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher MDPI AG
dc.relation info:eu-repo/grantAgreement/EC/H2020/688101/EU//SUPERAID7
dc.relation.ispartofseries Materials en
dc.relation.ispartofseries Volume 12, issue 1 en
dc.rights openAccess en
dc.subject.other Materials Science(all) en
dc.subject.other 114 Physical sciences en
dc.title Simulation of the impact of ionized impurity scattering on the total mobility in si nanowire transistors en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Neuroscience and Biomedical Engineering
dc.contributor.department University of Glasgow
dc.contributor.department Vienna University of Technology
dc.contributor.department Department of Neuroscience and Biomedical Engineering en
dc.subject.keyword Charge transport
dc.subject.keyword Kubo-Greenwood formalism
dc.subject.keyword Nanowire field-effect transistors
dc.subject.keyword One-dimensional multi-subband scattering models
dc.subject.keyword Schrödinger-poisson solvers
dc.subject.keyword Silicon nanomaterials
dc.subject.keyword Materials Science(all)
dc.subject.keyword 114 Physical sciences
dc.identifier.urn URN:NBN:fi:aalto-201901301478
dc.identifier.doi 10.3390/ma12010124
dc.type.version publishedVersion

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