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Influence of Fermi level position on vacancy-assisted diffusion of aluminum in zinc oxide

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Sky, T. N.
dc.contributor.author Johansen, K. M.
dc.contributor.author Venkatachalapathy, V.
dc.contributor.author Svensson, B. G.
dc.contributor.author Vines, L.
dc.contributor.author Tuomisto, F.
dc.date.accessioned 2019-01-30T15:08:23Z
dc.date.available 2019-01-30T15:08:23Z
dc.date.issued 2018-12-28
dc.identifier.citation Sky , T N , Johansen , K M , Venkatachalapathy , V , Svensson , B G , Vines , L & Tuomisto , F 2018 , ' Influence of Fermi level position on vacancy-assisted diffusion of aluminum in zinc oxide ' , Physical Review B , vol. 98 , no. 24 , 245204 , pp. 1-24 . https://doi.org/10.1103/PhysRevB.98.245204 en
dc.identifier.issn 2469-9950
dc.identifier.issn 2469-9969
dc.identifier.other PURE UUID: 4b8e154b-8ca2-44ab-bc49-f941001ca408
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/4b8e154b-8ca2-44ab-bc49-f941001ca408
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85059541245&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/31250382/PhysRevB.98.245204.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/36246
dc.description.abstract The influence of Fermi level position and annealing ambient on the zinc vacancy VZn generation and Al diffusion is studied in monocrystalline zinc oxide (ZnO). From secondary-ion mass spectrometry and positron annihilation spectroscopy results, a quadratic dependence between the concentrations of VZn and Al is established, demonstrating the Fermi level dependence of the formation of the electrically compensating -2 charge state of VZn in conductive n-type ZnO crystals. In contrast, thermal treatment in the zinc-rich ambient is shown to efficiently reduce the VZn concentration and related complexes. Using a reaction-diffusion model, the diffusion characteristics of Al at different donor background concentrations are fully accounted for by mobile (AlZnVZn)-pairs. These pairs form via the migration and reaction of isolated VZn2- with the essentially immobile AlZn+. We obtain a migration barrier for the (AlZnVZn)- pair of 2.4±0.2 eV, in good agreement with theoretical predictions. In addition to strongly alter the shape of the Al diffusion profiles, increasing the donor background concentration also results in an enhanced effective Al diffusivity, attributed to a reduction in the VZn2-formation energy as the Fermi level position increases. en
dc.format.extent 1-24
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher American Physical Society
dc.relation.ispartofseries Physical Review B en
dc.relation.ispartofseries Volume 98, issue 24 en
dc.rights openAccess en
dc.title Influence of Fermi level position on vacancy-assisted diffusion of aluminum in zinc oxide en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department University of Oslo
dc.contributor.department Antimatter and Nuclear Engineering
dc.contributor.department Department of Applied Physics en
dc.identifier.urn URN:NBN:fi:aalto-201901301416
dc.identifier.doi 10.1103/PhysRevB.98.245204
dc.type.version publishedVersion

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