Title: | Scalable nanofabrication techniques for III-V compound semiconductors and dielectrics Skaalattavia nanovalmistustekniikoita III-V-yhdistepuolijohteille ja dielektreille |
Author(s): | Kauppinen, Christoffer |
Date: | 2018 |
Language: | en |
Pages: | 100 + app. 60 |
Department: | Elektroniikan ja nanotekniikan laitos Department of Electronics and Nanoengineering |
ISBN: | 978-952-60-8352-0 (electronic) 978-952-60-8351-3 (printed) |
Series: | Aalto University publication series DOCTORAL DISSERTATIONS, 248/2018 |
ISSN: | 1799-4942 (electronic) 1799-4934 (printed) 1799-4934 (ISSN-L) |
Supervising professor(s): | Sopanen, Markku, Prof., Aalto University, Department of Electronics and Nanoengineering, Finland |
Subject: | Electrical engineering, Physics |
Keywords: | GaAs, nanowire, ALD, gradient refractive index, GaN, atomic layer etching, nanolanka, taitekerroin gradientti, atomikerrosetsaus |
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Abstract:Fotoniikan ja elektroniikan uusimpien nanorakenteiden ja laitteiden toteuttaminen vaati nykyisten nanovalmistustekniikoiden rajoitteiden ylittämistä. Tämä väitöskirja käsittelee uusia skaalattavia menetelmiä nanorakenteiden valmistukseen III-V-yhdistepuolijohteista ja eristemateriaaleista. |
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Parts:[Publication 1]: Christoffer Kauppinen, Tuomas Haggren, Aleksandr Kravchenko, Hua Jiang, Teppo Huhtio, Esko Kauppinen, Veer Dhaka, Sami Suihkonen, Matti Kaivola, Harri Lipsanen, and Markku Sopanen. A technique for large-area position-controlled growth of GaAs nanowire arrays. Nanotechnology, 27, 13, 135601, February 2016. The full text of this publication is available in the PDF file of the dissertation. DOI: 10.1088/0957-4484/27/13/135601 View at Publisher [Publication 2]: Jori Lemettinen, Christoffer Kauppinen, Marius Rudzinski, Atte Haapalinna, Turkka O. Tuomi, and Sami Suihkonen. MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain. Semiconductor Science and Technology , 32, 4, 045003, March 2017. The full text of this publication is available in the PDF file of the dissertation. DOI: 10.1088/1361-6641/aa5942 View at Publisher [Publication 3]: Christoffer Kauppinen, Kirill Isakov, and Markku Sopanen. Grass-like Alumina with Low Refractive Index for Scalable, Broadband, Omnidirectional Antireflection Coatings on Glass Using Atomic Layer Deposition. ACS Applied Materials & Interfaces, 9, 17, 15038–15043, April 2017. The full text of this publication is available in the PDF file of the dissertation. DOI: 10.1021/acsami.7b01733 View at Publisher [Publication 4]: Christoffer Kauppinen, Sabbir Ahmed Khan, Jonas Sundqvist, Dmitry B. Suyatin, Sami Suihkonen, Esko I. Kauppinen and Markku Sopanen. Atomic layer etching of gallium nitride (0001). Journal of Vacuum Science & Technology A, 35, 6, 060603, November 2017. The full text of this publication is available in the PDF file of the dissertation. DOI: 10.1116/1.4993996 View at Publisher [Publication 5]: Jori Lemettinen, Hironori Okumura, Iurii Kim, Christoffer Kauppinen, Tomàs Palacios, and Sami Suihkonen. MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality. Journal of Crystal Growth, 487, 12-16, February 2018. The full text of this publication is available in the PDF file of the dissertation. DOI: 10.1016/j.jcrysgro.2018.02.013 View at Publisher [Publication 6]: Sabbir Khan, Dmitry B. Suyatin, Jonas Sundqvist, Mariusz Graczyk, Marcel Junige, Christoffer Kauppinen, Anders Kvennefors, Maria Huffman, Ivan Maximov. High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching. ACS Applied Nano Materials, 1, 6, 2476–2482, May 2018. The full text of this publication is available in the PDF file of the dissertation. DOI: 10.1021/acsanm.8b00509 View at Publisher |
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