Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Medina-Bailon, C.
dc.contributor.author Sadi, T.
dc.contributor.author Nedjalkov, M.
dc.contributor.author Lee, J.
dc.contributor.author Berrada, S.
dc.contributor.author Carrillo-Nunez, H.
dc.contributor.author Georgiev, V.
dc.contributor.author Selberherr, S.
dc.contributor.author Asenov, A.
dc.date.accessioned 2018-12-10T10:23:21Z
dc.date.available 2018-12-10T10:23:21Z
dc.date.issued 2018-05-03
dc.identifier.citation Medina-Bailon , C , Sadi , T , Nedjalkov , M , Lee , J , Berrada , S , Carrillo-Nunez , H , Georgiev , V , Selberherr , S & Asenov , A 2018 , Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors . in 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 . vol. 2018-January , Institute of Electrical and Electronics Engineers , pp. 1-4 , Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon , Granada , Spain , 19/03/2018 . DOI: 10.1109/ULIS.2018.8354723 en
dc.identifier.isbn 9781538648117
dc.identifier.other PURE UUID: 8c55301c-376d-4f57-8895-8615389fb27c
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/study-of-the-1d-scattering-mechanisms-impact-on-the-mobility-in-si-nanowire-transistors(8c55301c-376d-4f57-8895-8615389fb27c).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85050942677&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/27537408/SCI_Medina_Bailon_Study_EUROSOI_ULIS_2018_CMedinaBailon.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/35149
dc.description.abstract The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schrödinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit. en
dc.format.extent 4
dc.format.extent 1-4
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartof Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon en
dc.relation.ispartofseries 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 en
dc.relation.ispartofseries Volume 2018-January en
dc.rights openAccess en
dc.subject.other Hardware and Architecture en
dc.subject.other Electronic, Optical and Magnetic Materials en
dc.subject.other Electrical and Electronic Engineering en
dc.subject.other 214 Mechanical engineering en
dc.title Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors en
dc.type A4 Artikkeli konferenssijulkaisussa fi
dc.description.version Peer reviewed en
dc.contributor.department University of Glasgow
dc.contributor.department Department of Neuroscience and Biomedical Engineering
dc.contributor.department Vienna University of Technology
dc.contributor.department Department of Media
dc.subject.keyword Impurity Scattering
dc.subject.keyword Kubo-Greenwood Formalism
dc.subject.keyword Matthiessen rule
dc.subject.keyword Nanowire FETs
dc.subject.keyword Phonon Scattering
dc.subject.keyword Hardware and Architecture
dc.subject.keyword Electronic, Optical and Magnetic Materials
dc.subject.keyword Electrical and Electronic Engineering
dc.subject.keyword 214 Mechanical engineering
dc.identifier.urn URN:NBN:fi:aalto-201812106164
dc.identifier.doi 10.1109/ULIS.2018.8354723
dc.type.version acceptedVersion


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