Moving Beyond p-Type mc-Si

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2018
Major/Subject
Mcode
Degree programme
Language
en
Pages
6
1525 - 1530
Series
IEEE Journal of Photovoltaics, Volume 8, issue 6
Abstract
N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. By directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si.
Description
| openaire: EC/FP7/307315/EU//SOLARX
Keywords
Charge carrier lifetime, Correlative microscopy, Iron, micro-photolumine-scence (μ-PL), micro-X-ray fluorescence (μ-XRF), n-type, Photovoltaic cells, Photovoltaic systems, precipitate, Silicon, silicon, synchrotron
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Citation
Morishige , A E , Heinz , F D , Laine , H S , Schon , J , Kwapil , W , Lai , B , Savin , H , Schubert , M C & Buonassisi , T 2018 , ' Moving Beyond p-Type mc-Si : Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon ' , IEEE Journal of Photovoltaics , vol. 8 , no. 6 , pp. 1525 - 1530 . https://doi.org/10.1109/JPHOTOV.2018.2869544