On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Dhayalan, Sathish Kumar
dc.contributor.author Kujala, Jiri
dc.contributor.author Slotte, Jonatan
dc.contributor.author Pourtois, Geoffrey
dc.contributor.author Simoen, Eddy
dc.contributor.author Rosseel, Erik
dc.contributor.author Hikavyy, Andriy
dc.contributor.author Shimura, Yosuke
dc.contributor.author Loo, Roger
dc.contributor.author Vandervorst, Wilfried
dc.date.accessioned 2018-12-10T10:17:11Z
dc.date.available 2018-12-10T10:17:11Z
dc.date.issued 2018
dc.identifier.citation Dhayalan , S K , Kujala , J , Slotte , J , Pourtois , G , Simoen , E , Rosseel , E , Hikavyy , A , Shimura , Y , Loo , R & Vandervorst , W 2018 , ' On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si : P Epitaxial Films for Source-Drain Stressor Applications ' ECS Journal of Solid State Science and Technology , vol. 7 , no. 5 , pp. P228-P237 . DOI: 10.1149/2.0071805jss en
dc.identifier.issn 2162-8769
dc.identifier.other PURE UUID: 512d4677-9ccd-4f90-8cc3-de25acbaf50b
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/on-the-evolution-of-strain-and-electrical-properties-in-asgrown-and-annealed-si(512d4677-9ccd-4f90-8cc3-de25acbaf50b).html
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/29743204/ECS_J._Solid_State_Sci._Technol._2018_Dhayalan_P228_37.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/35042
dc.description.abstract Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain ( en
dc.format.extent 10
dc.format.extent P228-P237
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries ECS Journal of Solid State Science and Technology en
dc.relation.ispartofseries Volume 7, issue 5 en
dc.rights openAccess en
dc.subject.other 114 Physical sciences en
dc.title On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department IMEC Vzw
dc.contributor.department Department of Applied Physics
dc.contributor.department Antimatter and Nuclear Engineering
dc.contributor.department University of Antwerp
dc.contributor.department Ghent University
dc.subject.keyword DOPED SILICON
dc.subject.keyword CHANNEL FINFETS
dc.subject.keyword MOBILITY
dc.subject.keyword DEVICES
dc.subject.keyword 114 Physical sciences
dc.identifier.urn URN:NBN:fi:aalto-201812106057
dc.identifier.doi 10.1149/2.0071805jss
dc.type.version publishedVersion

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