On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si

Dhayalan, Sathish Kumar; Kujala, Jiri; Slotte, Jonatan; Pourtois, Geoffrey; Simoen, Eddy; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Loo, Roger; Vandervorst, Wilfried

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On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si

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Title:	On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si
Author(s):	Dhayalan, Sathish Kumar ; Kujala, Jiri ; Slotte, Jonatan ; Pourtois, Geoffrey ; Simoen, Eddy ; Rosseel, Erik ; Hikavyy, Andriy ; Shimura, Yosuke ; Loo, Roger ; Vandervorst, Wilfried
Date:	2018
Language:	en
Pages:	10 P228-P237
Department:	IMEC Vzw Department of Applied Physics Antimatter and Nuclear Engineering University of Antwerp Ghent University
Series:	ECS Journal of Solid State Science and Technology, Volume 7, issue 5
ISSN:	2162-8769
DOI-number:	10.1149/2.0071805jss
Keywords:	DOPED SILICON, CHANNEL FINFETS, MOBILITY, DEVICES
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Citation: Dhayalan , S K , Kujala , J , Slotte , J , Pourtois , G , Simoen , E , Rosseel , E , Hikavyy , A , Shimura , Y , Loo , R & Vandervorst , W 2018 , ' On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si : P Epitaxial Films for Source-Drain Stressor Applications ' , ECS Journal of Solid State Science and Technology , vol. 7 , no. 5 , pp. P228-P237 . https://doi.org/10.1149/2.0071805jss
Abstract: Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (

Permanent link to this item: http://urn.fi/URN:NBN:fi:aalto-201812106057 Email this Export to RefWorks QR Code Print BibTex Tweet