MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2018-04-01
Major/Subject
Mcode
Degree programme
Language
en
Pages
7
50-56
Series
Journal of Crystal Growth, Volume 487
Abstract
We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.
Description
Keywords
A1. Polarity, A1. X-ray diffraction, A3. Metal-organic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting aluminum compounds
Other note
Citation
Lemettinen , J , Okumura , H , Kim , I , Rudzinski , M , Grzonka , J , Palacios , T & Suihkonen , S 2018 , ' MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC ' , Journal of Crystal Growth , vol. 487 , pp. 50-56 . https://doi.org/10.1016/j.jcrysgro.2018.02.020