Citation:
Lemettinen , J , Okumura , H , Kim , I , Kauppinen , C , Palacios , T & Suihkonen , S 2018 , ' MOVPE growth of N-polar AlN on 4H-SiC : Effect of substrate miscut on layer quality ' Journal of Crystal Growth , vol 487 , pp. 12-16 . DOI: 10.1016/j.jcrysgro.2018.02.013
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