Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en Liu, Ying Tan, Zhenbing Kumar, Manohar Abhilash, T. S. Liu, Guan Jun Hakonen, Pertti 2018-10-16T08:54:18Z 2018-10-16T08:54:18Z 2018-09-01
dc.identifier.citation Liu , Y , Tan , Z , Kumar , M , Abhilash , T S , Liu , G J & Hakonen , P 2018 , ' Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials ' APL Materials , vol 6 , no. 9 , 0911021 , pp. 1-7 . DOI: 10.1063/1.5042327 en
dc.identifier.issn 2166-532X
dc.identifier.other PURE UUID: 50c59f49-9f1c-4aff-999f-461b570ac16d
dc.identifier.other PURE ITEMURL:
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dc.description | openaire: EC/H2020/696656/EU//GrapheneCore1 
dc.description.abstract Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10-5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz. en
dc.format.extent 1-7
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation info:eu-repo/grantAgreement/EC/H2020/696656/EU//GrapheneCore1 
dc.relation.ispartofseries APL Materials en
dc.relation.ispartofseries Volume 6, issue 9 en
dc.rights openAccess en
dc.subject.other Materials Science(all) en
dc.subject.other Engineering(all) en
dc.subject.other 114 Physical sciences en
dc.title Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department National University of Defense Technology
dc.contributor.department Centre of Excellence in Quantum Technology, QTF
dc.contributor.department Department of Applied Physics
dc.subject.keyword Materials Science(all)
dc.subject.keyword Engineering(all)
dc.subject.keyword 114 Physical sciences
dc.identifier.urn URN:NBN:fi:aalto-201810165351
dc.identifier.doi 10.1063/1.5042327
dc.type.version publishedVersion

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