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Electroluminescent cooling in intracavity light emitters

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Sadi, Toufik
dc.contributor.author Kivisaari, Pyry
dc.contributor.author Tiira, Jonna
dc.contributor.author Radevici, Ivan
dc.contributor.author Haggren, Tuomas
dc.contributor.author Oksanen, Jani
dc.date.accessioned 2018-08-27T11:02:04Z
dc.date.available 2018-08-27T11:02:04Z
dc.date.issued 2018-01-01
dc.identifier.citation Sadi , T , Kivisaari , P , Tiira , J , Radevici , I , Haggren , T & Oksanen , J 2018 , ' Electroluminescent cooling in intracavity light emitters : modeling and experiments ' , Optical and Quantum Electronics , vol. 50 , no. 1 , 18 , pp. 1-8 . https://doi.org/10.1007/s11082-017-1285-z en
dc.identifier.issn 0306-8919
dc.identifier.other PURE UUID: 33efe6e4-5708-4b31-91ec-46987e1d7f9e
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/33efe6e4-5708-4b31-91ec-46987e1d7f9e
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85039075494&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/27370712/JOQENUSOD.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/33599
dc.description | openaire: EC/H2020/638173/EU//iTPX
dc.description.abstract We develop a coupled electronic charge and photon transport simulation model to allow for deeper analysis of our recent experimental studies of intracavity double diode structures (DDSs). The studied structures consist of optically coupled AlGaAs/GaAs double heterojunction light emitting diode (LED) and GaAs p–n-homojunction photodiode (PD) structure, integrated as a single semiconductor device. The drift–diffusion formalism for charge transport and an optical model, coupling the LED and the PD, are self-consistently applied to complement our experimental work on the evaluation of the efficiency of these DDSs. This is to understand better their suitability for electroluminescent cooling (ELC) demonstration, and shed further light on electroluminescence and optical energy transfer in the structures. The presented results emphasize the adverse effect of non-radiative recombination on device efficiency, which is the main obstacle for achieving ELC in III-V semiconductors. en
dc.format.extent 1-8
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation info:eu-repo/grantAgreement/EC/H2020/638173/EU//iTPX
dc.relation.ispartofseries OPTICAL AND QUANTUM ELECTRONICS en
dc.relation.ispartofseries Volume 50, issue 1 en
dc.rights openAccess en
dc.title Electroluminescent cooling in intracavity light emitters en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Neuroscience and Biomedical Engineering
dc.subject.keyword Electroluminescent cooling
dc.subject.keyword III-As
dc.subject.keyword Intracavity light emitters
dc.subject.keyword Light-emitting diodes
dc.subject.keyword Photodiodes
dc.identifier.urn URN:NBN:fi:aalto-201808274728
dc.identifier.doi 10.1007/s11082-017-1285-z
dc.date.embargo info:eu-repo/date/embargoEnd/2019-01-01

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