Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1-x/SiO2 heterostructures investigated by positron annihilation spectroscopy

 |  Login

Files in this item

Files Size Format View

There are no files associated with this item.

This item appears in the following Collection(s)

Search archive

Advanced Search

article-iconSubmit a publication


My Account