Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/Si1-xGex/SiO2/(100)Si structures with nm-thi

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Madia, O.
dc.contributor.author Nguyen, A.P.D.
dc.contributor.author Thoan, N.H.
dc.contributor.author "Afanas'ev", V.
dc.contributor.author Stesmans, A.
dc.contributor.author Souriau, L.
dc.contributor.author Slotte, J.
dc.contributor.author Tuomisto, F.
dc.date.accessioned 2018-08-21T13:48:00Z
dc.date.available 2018-08-21T13:48:00Z
dc.date.issued 2014-02-01
dc.identifier.citation Madia , O , Nguyen , A P D , Thoan , N H , "Afanas'ev" , V , Stesmans , A , Souriau , L , Slotte , J & Tuomisto , F 2014 , ' Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO 2 /Si 1-x Ge x /SiO 2 /(100)Si structures with nm-thi ' APPLIED SURFACE SCIENCE , vol 291 , pp. 11-15 . DOI: 10.1016/j.apsusc.2013.09.025 en
dc.identifier.issn 0169-4332
dc.identifier.issn 1873-5584
dc.identifier.other PURE UUID: d1c57bb1-1a71-4077-9be8-11c4f2036c43
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/impact-of-strain-on-the-passivation-efficiency-of-ge-dangling-bond-interface-defects-in-condensation-grown-sio2si1xgexsio2100si-structures-with-nmthi(d1c57bb1-1a71-4077-9be8-11c4f2036c43).html
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/33566
dc.description | openaire: EC/FP7/261868/EU//MORDRED
dc.format.extent 5
dc.format.extent 11-15
dc.language.iso en en
dc.relation info:eu-repo/grantAgreement/EC/FP7/261868/EU//MORDRED
dc.relation.ispartofseries APPLIED SURFACE SCIENCE en
dc.relation.ispartofseries Volume 291 en
dc.rights restrictedAccess en
dc.subject.other 114 Physical sciences en
dc.subject.other 221 Nanotechnology en
dc.subject.other 214 Mechanical engineering en
dc.subject.other 218 Environmental engineering en
dc.title Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/Si1-xGex/SiO2/(100)Si structures with nm-thi en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword charge
dc.subject.keyword defect
dc.subject.keyword positron
dc.subject.keyword 114 Physical sciences
dc.subject.keyword 221 Nanotechnology
dc.subject.keyword 214 Mechanical engineering
dc.subject.keyword 218 Environmental engineering
dc.identifier.urn URN:NBN:fi:aalto-201808214699
dc.identifier.doi 10.1016/j.apsusc.2013.09.025


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