Solubility and Diffusivity

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en Jensen, Mallory A. Morishige, Ashley E. Chakraborty, Sagnik Sharma, Romika Laine, Hannu S. Lai, Barry Rose, Volker Youssef, Amanda Looney, Erin E. Wieghold, Sarah Poindexter, Jeremy R. Correa-Baena, Juan Pablo Felisca, Tahina Savin, Hele Li, Joel B. Buonassisi, Tonio 2018-08-21T13:43:50Z 2018-08-21T13:43:50Z 2018-03-01
dc.identifier.citation Jensen , M A , Morishige , A E , Chakraborty , S , Sharma , R , Laine , H S , Lai , B , Rose , V , Youssef , A , Looney , E E , Wieghold , S , Poindexter , J R , Correa-Baena , J P , Felisca , T , Savin , H , Li , J B & Buonassisi , T 2018 , ' Solubility and Diffusivity : Important Metrics in the Search for the Root Cause of Light-and Elevated Temperature-Induced Degradation ' IEEE Journal of Photovoltaics , vol 8 , no. 2 , pp. 448-455 . DOI: 10.1109/JPHOTOV.2018.2791411 en
dc.identifier.issn 2156-3381
dc.identifier.issn 2156-3403
dc.identifier.other PURE UUID: 3701d353-713c-4fde-bc22-fc404aa203e0
dc.identifier.other PURE ITEMURL:
dc.identifier.other PURE LINK:
dc.description | openaire: EC/FP7/307315/EU//SOLARX
dc.description.abstract Light-and elevated temperature-induced degradation (LeTID) is a detrimental effect observed under operating conditions in p-Type multicrystalline silicon (mc-Si) solar cells. In this contribution, we employ synchrotron-based techniques to study the dissolution of precipitates due to different firing processes at grain boundaries in LeTID-Affected mc-Si. The synchrotron measurements show clear dissolution of collocated metal precipitates during firing. We compare our observations with degradation behavior in the same wafers. The experimental results are complemented with process simulations to provide insight into the change in bulk point defect concentration due to firing. Several studies have proposed that LeTID is caused by metal-rich precipitate dissolution during contact firing, and we find that the solubility and diffusivity are promising screening metrics to identify metals that are compatible with this hypothesis. While slower and less soluble elements (e.g., Fe and Cr) are not compatible according to our simulations, the point defect concentrations of faster and more soluble elements (e.g., Cu and Ni) increase after a high-Temperature firing process, primarily due to emitter segregation rather than precipitate dissolution. These results are a useful complement to lifetime spectroscopy techniques, and can be used to evaluate additional candidates in the search for the root cause of LeTID. en
dc.format.extent 8
dc.format.extent 448-455
dc.language.iso en en
dc.relation info:eu-repo/grantAgreement/EC/FP7/307315/EU//SOLARX
dc.relation.ispartofseries IEEE Journal of Photovoltaics en
dc.relation.ispartofseries Volume 8, issue 2 en
dc.rights restrictedAccess en
dc.subject.other Electronic, Optical and Magnetic Materials en
dc.subject.other Condensed Matter Physics en
dc.subject.other Electrical and Electronic Engineering en
dc.subject.other 216 Materials engineering en
dc.title Solubility and Diffusivity en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Massachusetts Institute of Technology
dc.contributor.department Solar Energy Research Institute of Singapore
dc.contributor.department Department of Electronics and Nanoengineering
dc.contributor.department Argonne National Laboratory
dc.subject.keyword Carrier-induced degradation (CID)
dc.subject.keyword light-and elevated temperature-induced degradation (LeTID)
dc.subject.keyword light-induced degradation
dc.subject.keyword materials reliability
dc.subject.keyword multicrystalline silicon (mc-Si)
dc.subject.keyword passivated emitter and rear cell (PERC)
dc.subject.keyword silicon
dc.subject.keyword synchrotron
dc.subject.keyword X-ray fluorescence
dc.subject.keyword Electronic, Optical and Magnetic Materials
dc.subject.keyword Condensed Matter Physics
dc.subject.keyword Electrical and Electronic Engineering
dc.subject.keyword 216 Materials engineering
dc.identifier.urn URN:NBN:fi:aalto-201808214612
dc.identifier.doi 10.1109/JPHOTOV.2018.2791411

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