Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Schulz, Stefan
dc.contributor.author Caro, Miguel A.
dc.contributor.author Coughlan, Conor
dc.contributor.author "O'Reilly", Eoin P.
dc.date.accessioned 2018-08-08T10:00:03Z
dc.date.available 2018-08-08T10:00:03Z
dc.date.issued 2015
dc.identifier.citation Schulz , S , Caro , M A , Coughlan , C & "O'Reilly" , E P 2015 , ' Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells ' PHYSICAL REVIEW B , vol 91 , no. 3 , 035439 , pp. 1-12 . DOI: 10.1103/PhysRevB.91.035439 en
dc.identifier.issn 1098-0121
dc.identifier.issn 1550-235X
dc.identifier.other PURE UUID: 18567004-4d54-4949-86a1-6a5a9a25fe8d
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/atomistic-analysis-of-the-impact-of-alloy-and-wellwidth-fluctuations-on-the-electronic-and-optical-properties-of-ingangan-quantum-wells(18567004-4d54-4949-86a1-6a5a9a25fe8d).html
dc.identifier.other PURE LINK: http://dx.doi.org/10.1103/PhysRevB.91.035439
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/26798947/PhysRevB.91.035439.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/33046
dc.description.abstract We present an atomistic description of the electronic and optical properties of In0.25Ga0.75N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field fluctuations as well as Coulomb effects. We find a strong hole and much weaker electron wave function localization in InGaN random alloy quantum wells. The presented calculations show that while the electron states are mainly localized by well-width fluctuations, the holes states are already localized by random alloy fluctuations. These localization effects affect significantly the quantum well optical properties, leading to strong inhomogeneous broadening of the lowest interband transition energy. Our results are compared with experimental literature data. en
dc.format.extent 1-12
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries PHYSICAL REVIEW B en
dc.relation.ispartofseries Volume 91, issue 3 en
dc.rights openAccess en
dc.subject.other 114 Physical sciences en
dc.subject.other 221 Nanotechnology en
dc.subject.other 214 Mechanical engineering en
dc.subject.other 218 Environmental engineering en
dc.title Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.contributor.department Department of Electrical Engineering and Automation en
dc.subject.keyword 114 Physical sciences
dc.subject.keyword 221 Nanotechnology
dc.subject.keyword 214 Mechanical engineering
dc.subject.keyword 218 Environmental engineering
dc.identifier.urn URN:NBN:fi:aalto-201808084446
dc.identifier.doi 10.1103/PhysRevB.91.035439
dc.type.version publishedVersion


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