On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition

Altmetrics



Title:	On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition
Author(s):	Liu, Xuwen ; Haimi, Eero ; Hannula, Simo-Pekka ; Ylivaara, Oili M. E. ; Puurunen, Riikka L.
Date:	2014
Language:	en
Pages:	6 1-6
Department:	Department of Materials Science and Engineering Department of Chemical and Metallurgical Engineering Department of Chemistry and Materials Science
Series:	JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A, Volume 32, issue 1
ISSN:	0734-2101 1520-8559
DOI-number:	10.1116/1.4842655
» Show full item record
This publication is imported from Aalto University Research information portal: https://research.aalto.fi > View this publication in Research information portal > Other link related to publication (Research information portal) > View/Open full text file from Research information portal
Citation: Liu , X , Haimi , E , Hannula , S-P , Ylivaara , O M E & Puurunen , R L 2014 , ' On the reliability of nanoindentation hardness of Al2O3 films grown on Si-wafer by atomic layer deposition ' , JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A , vol. 32 , no. 1 , 01A116 , pp. 1-6 . https://doi.org/10.1116/1.4842655

Permanent link to this item: http://urn.fi/URN:NBN:fi:aalto-201808014254 Email this Export to RefWorks QR Code Print BibTex Tweet