Electronic Quality Improvement of Highly Defective Quasi-Mono Silicon Material by Phosphorus Diffusion Gettering

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Liu, Zhengjun
dc.contributor.author Vähänissi, Ville
dc.contributor.author Laine, Hannu S.
dc.contributor.author Lindeberg, Morten
dc.contributor.author Yli-Koski, Marko
dc.contributor.author Savin, Hele
dc.date.accessioned 2018-06-18T09:18:12Z
dc.date.available 2018-06-18T09:18:12Z
dc.date.issued 2017-06-10
dc.identifier.citation Liu , Z , Vähänissi , V , Laine , H S , Lindeberg , M , Yli-Koski , M & Savin , H 2017 , ' Electronic Quality Improvement of Highly Defective Quasi-Mono Silicon Material by Phosphorus Diffusion Gettering ' Advanced Electronic Materials , vol 3 , no. 6 , 1600435 . DOI: 10.1002/aelm.201600435 en
dc.identifier.issn 2199-160X
dc.identifier.other PURE UUID: 0f62eb70-e45a-4ea2-ac1d-49fe2843ca64
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/electronic-quality-improvement-of-highly-defective-quasimono-silicon-material-by-phosphorus-diffusion-gettering(0f62eb70-e45a-4ea2-ac1d-49fe2843ca64).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85017476245&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/21593465/ELEC_Liu_et_al_2017_Advanced_Electronic_Materials_1.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/31882
dc.description.abstract Quasi-mono silicon (QM-Si) attracts interest as a substrate material for silicon device processing with the promise to yield single-crystalline silicon quality with multicrystalline silicon cost. A significant barrier to widespread implementation of QM-Si is ingot edge-contamination caused by the seed material and crucible walls during crystal growth. This work aims to recover the scrap material in QM-Si manufacturing with a process easily adaptable to semiconductor device manufacturing. A phosphorus diffusion process at 870 °C for 60 min significantly improves the electronic quality of a QM-Si wafer cut from a contaminated edge brick. The harmonic minority carrier recombination lifetime of the wafer, a key predictor of ultimate device performance, experiences a tenfold increase from 17 to 178 μs, which makes the scrap QM-Si material usable for device fabrication. Local areas with suboptimal (<50 μs) lifetimes remaining can be further improved by a high temperature anneal before the phosphorus diffusion process. en
dc.format.extent 6
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries Advanced Electronic Materials en
dc.relation.ispartofseries Volume 3, issue 6 en
dc.rights openAccess en
dc.subject.other Electronic, Optical and Magnetic Materials en
dc.subject.other 216 Materials engineering en
dc.title Electronic Quality Improvement of Highly Defective Quasi-Mono Silicon Material by Phosphorus Diffusion Gettering en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Micro and Nanosciences
dc.contributor.department Department of Electronics and Nanoengineering en
dc.subject.keyword Defect engineering
dc.subject.keyword Minority charge carrier lifetime
dc.subject.keyword Quasi-mono silicon
dc.subject.keyword Silicon
dc.subject.keyword Electronic, Optical and Magnetic Materials
dc.subject.keyword 216 Materials engineering
dc.identifier.urn URN:NBN:fi:aalto-201806183300
dc.identifier.doi 10.1002/aelm.201600435
dc.type.version publishedVersion


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