Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Lipsanen, H.
dc.contributor.author Sopanen, M.
dc.contributor.author Ahopelto, J.
dc.date.accessioned 2018-05-22T14:53:40Z
dc.date.available 2018-05-22T14:53:40Z
dc.date.issued 1995-05-15
dc.identifier.citation Lipsanen , H , Sopanen , M & Ahopelto , J 1995 , ' Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots ' PHYSICAL REVIEW B , vol 51 , no. 19 , pp. 13868-13871 . DOI: 10.1103/PhysRevB.51.13868 en
dc.identifier.issn 1098-0121
dc.identifier.issn 1550-235X
dc.identifier.other PURE UUID: f7197666-7ab9-4ad0-8217-6b026d4e99a4
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/luminescence-from-excited-states-in-straininduced-inxga1xas-quantum-dots(f7197666-7ab9-4ad0-8217-6b026d4e99a4).html
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/14806510/PhysRevB.51.13868.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/31281
dc.description.abstract We have fabricated quantum dots by locally straining InxGa1−xAs quantum wells with self-organized growth of nanometer-scale InP stressors on the sample surface. The structure is completed in a single growth run using metalorganic vapor-phase epitaxy. Photoluminescence from the dots is redshifted by up to 105 meV from the quantum-well peak due to the lateral confinement of excitons. Clearly resolved luminescence peaks from three excited states separated by 16–20 meV are observed when the quantum well is placed at the depth of 1–10 nm from the surface of the sample. The observed redshift and peak separation are in agreement with simple calculations using a finite-element method and two-dimensional parabolic potential model. This structure is easily fabricated and offers a great potential for the optical study of relaxation and recombination phenomena. en
dc.format.extent 4
dc.format.extent 13868-13871
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries PHYSICAL REVIEW B en
dc.relation.ispartofseries Volume 51, issue 19 en
dc.rights openAccess en
dc.title Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Micro and Nanosciences
dc.subject.keyword luminescence
dc.subject.keyword quantum dots
dc.subject.keyword semiconductors
dc.identifier.urn URN:NBN:fi:aalto-201805222721
dc.identifier.doi 10.1103/PhysRevB.51.13868
dc.type.version publishedVersion


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