Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

Roschier, Leif; Penttilä, Jari; Martin, Michel; Hakonen, Pertti; Paalanen, Mikko; Tapper, Unto; Kauppinen, Esko I.; Journet, Catherine; Bernier, Patrick

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Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

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Title:	Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation
Author(s):	Roschier, Leif ; Penttilä, Jari ; Martin, Michel ; Hakonen, Pertti ; Paalanen, Mikko ; Tapper, Unto ; Kauppinen, Esko I. ; Journet, Catherine ; Bernier, Patrick
Date:	1999-08-02
Language:	en
Pages:	3 728-730
Department:	Department of Applied Physics
Series:	Applied Physics Letters, Volume 75, issue 5
ISSN:	0003-6951 1077-3118
DOI-number:	10.1063/1.124495
Keywords:	carbon nanotube, single-electron transistor
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This publication is imported from Aalto University Research information portal: https://research.aalto.fi > View this publication in Research information portal > Other link related to publication (Research information portal) > View/Open full text file from Research information portal
Citation: Roschier , L , Penttilä , J , Martin , M , Hakonen , P , Paalanen , M , Tapper , U , Kauppinen , E I , Journet , C & Bernier , P 1999 , ' Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation ' , Applied Physics Letters , vol. 75 , no. 5 , pp. 728-730 . https://doi.org/10.1063/1.124495
Abstract: A multiwalled carbon nanotube (MWNT) based single-electron transistors (SET) were manufactured using atomic force microscopy (AFM) manipulation. Its current-voltage characteristics were measured. Single-electron charging effects were shown through gate modulation. The results imply the MWNT to be semiconducting with a gap of 15 meV. The Coulomb staircase structure in the data agrees with the asymmetry of the tunnel junctions. The method combined with electron-beam soldering opens new possibilities to optimize junction parameters for specific purposes. This could give new opportunities in the fabrication of single electron transistors.

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