III–V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Haggren, Tuomas
dc.contributor.author Khayrudinov, Vladislav
dc.contributor.author Dhaka, Veer
dc.contributor.author Jiang, Hua
dc.contributor.author Shah, Syed
dc.contributor.author Kim, Maria
dc.contributor.author Lipsanen, Harri
dc.date.accessioned 2018-05-22T14:50:10Z
dc.date.available 2018-05-22T14:50:10Z
dc.date.issued 2018-04-23
dc.identifier.citation Haggren , T , Khayrudinov , V , Dhaka , V , Jiang , H , Shah , S , Kim , M & Lipsanen , H 2018 , ' III–V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs ' SCIENTIFIC REPORTS , vol 8 , 6410 , pp. 1-9 . DOI: 10.1038/s41598-018-24665-9 en
dc.identifier.issn 2045-2322
dc.identifier.other PURE UUID: dc37f56b-d107-4ea6-b95e-0d253bf4ee46
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/iiiv-nanowires-on-black-silicon-and-lowtemperature-growth-of-selfcatalyzed-rectangular-inas-nws(dc37f56b-d107-4ea6-b95e-0d253bf4ee46).html
dc.identifier.other PURE LINK: https://www.nature.com/articles/s41598-018-24665-9
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/19097135/PUBLISHED.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/31207
dc.description.abstract We report the use of black silicon (bSi) as a growth platform for III–V nanowires (NWs), which enables low reflectance over a broad wavelength range as well as fabrication of optoelectronic devices by metalorganic vapor phase epitaxy. In addition, a new isolated growth regime is reported for self-catalyzed InAs NWs at record-low temperatures of 280 °C–365 °C, where consistently rectangular [-211]-oriented NWs are obtained. The bSi substrate is shown to support the growth of additionally GaAs and InP NWs, as well as heterostructured NWs. As seed particles, both ex-situ deposited Au nanoparticles and in-situ deposited In droplets are shown feasible. Particularly the InAs NWs with low band gap energy are used to extend low-reflectivity wavelength region into infrared, where the bSi alone remains transparent. Finally, a fabricated prototype device confirms the potential of III–V NWs combined with bSi for optoelectronic devices. Our results highlight the promise of III–V NWs on bSi for enhancing optoelectronic device performance on the low-cost Si substrates, and we believe that the new low-temperature NW growth regime advances the understanding and capabilities of NW growth. en
dc.format.extent 1-9
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries SCIENTIFIC REPORTS en
dc.relation.ispartofseries Volume 8 en
dc.rights openAccess en
dc.subject.other 213 Electronic, automation and communications engineering, electronics en
dc.title III–V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Neuroscience and Biomedical Engineering
dc.contributor.department Department of Electronics and Nanoengineering
dc.contributor.department Department of Applied Physics
dc.subject.keyword 213 Electronic, automation and communications engineering, electronics
dc.identifier.urn URN:NBN:fi:aalto-201805222647
dc.identifier.doi 10.1038/s41598-018-24665-9
dc.type.version publishedVersion


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