Electronically induced trapping of hydrogen by impurities in niobium

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Manninen, M.
dc.contributor.author Puska, M. J.
dc.contributor.author Nieminen, R. M.
dc.contributor.author Jena, P.
dc.date.accessioned 2018-05-22T14:48:07Z
dc.date.available 2018-05-22T14:48:07Z
dc.date.issued 1984-07-15
dc.identifier.citation Manninen , M , Puska , M J , Nieminen , R M & Jena , P 1984 , ' Electronically induced trapping of hydrogen by impurities in niobium ' Physical Review B , vol 30 , no. 2 , pp. 1065-1068 . DOI: 10.1103/PhysRevB.30.1065 en
dc.identifier.issn 0163-1829
dc.identifier.issn 1550-235X
dc.identifier.other PURE UUID: c6507ec1-bac1-4c92-b4c9-c81e73e3a51a
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/electronically-induced-trapping-of-hydrogen-by-impurities-in-niobium(c6507ec1-bac1-4c92-b4c9-c81e73e3a51a).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=35949022734&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/14710724/PhysRevB.30.1065.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/31163
dc.description.abstract The binding energies of hydrogen and its isotopes to substitutional impurities Ti, Cr, and V in niobium have been calculated. The hydrogen-metal interaction is based on the effective-medium theory. The wave mechanics of the hydrogenic interstitials are explicity dealt with, and the lattice distortion created by the hydrogen is incorporated through the method of lattice statics. The difference in the electronic structure between impurity and host atoms is shown to be largely responsible for the binding of hydrogen to the impurities. The results are in agreement with recent inelastic neutron scattering experiments. en
dc.format.extent 4
dc.format.extent 1065-1068
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries Physical Review B en
dc.relation.ispartofseries Volume 30, issue 2 en
dc.rights openAccess en
dc.subject.other Condensed Matter Physics en
dc.title Electronically induced trapping of hydrogen by impurities in niobium en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword Condensed Matter Physics
dc.identifier.urn URN:NBN:fi:aalto-201805222603
dc.identifier.doi 10.1103/PhysRevB.30.1065
dc.type.version publishedVersion


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