Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal organic chemical vapour deposition

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Tengborn, E.
dc.contributor.author Rummukainen, M.
dc.contributor.author Tuomisto, F.
dc.contributor.author Saarinen, K.
dc.contributor.author Rudzinski, M.
dc.contributor.author Hageman, P.R.
dc.contributor.author Larsen, P.K.
dc.contributor.author Nordlund, A.
dc.date.accessioned 2018-05-22T14:46:29Z
dc.date.available 2018-05-22T14:46:29Z
dc.date.issued 2006
dc.identifier.citation Tengborn , E , Rummukainen , M , Tuomisto , F , Saarinen , K , Rudzinski , M , Hageman , P R , Larsen , P K & Nordlund , A 2006 , ' Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal organic chemical vapour deposition ' Applied Physics Letters , vol 89 , no. 9 , 091905 , pp. 1-3 . DOI: 10.1063/1.2338887 en
dc.identifier.issn 1077-3118
dc.identifier.other PURE UUID: ba27d2f1-1f14-48f3-963f-176df37e54d7
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/effect-of-the-misorientation-of-the-4hsic-substrate-on-the-open-volume-defects-in-gan-grown-by-metal-organic-chemical-vapour-deposition(ba27d2f1-1f14-48f3-963f-176df37e54d7).html
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/13456009/1_2E2338887.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/31128
dc.description.abstract Positron annihilation spectroscopy has been used to study GaN grown by metal-organic chemical vapor deposition on misoriented 4H-SiC substrates. Two kinds of vacancy defects are observed: Ga vacancies and larger vacancy clusters in all the studied layers. In addition to vacancies, positrons annihilate at shallow traps that are likely to be dislocations. The results show that the vacancy concentration increases and the shallow positron trap concentration decreases with the increasing substrate misorientation. en
dc.format.extent 3
dc.format.extent 1-3
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 89, issue 9 en
dc.rights openAccess en
dc.title Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal organic chemical vapour deposition en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword annihilation
dc.subject.keyword GaN
dc.subject.keyword misoriented
dc.subject.keyword positron
dc.subject.keyword vacancy
dc.identifier.urn URN:NBN:fi:aalto-201805222568
dc.identifier.doi 10.1063/1.2338887
dc.type.version publishedVersion


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