Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2017-10-30
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Language
en
Pages
1-8
Series
Physical Review Applied, Volume 8, issue 4
Abstract
Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of ef within a measurement uncertainty as low as 0.27 ppm.
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Zhao , R , Rossi , A , Giblin , S P , Fletcher , J D , Hudson , F E , Möttönen , M , Kataoka , M & Dzurak , A S 2017 , ' Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping ' , Physical Review Applied , vol. 8 , no. 4 , 044021 , pp. 1-8 . https://doi.org/10.1103/PhysRevApplied.8.044021