Fabrication of InGaAs quantum disks using self-organized InP islands as a mask in wet chemical etching

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Sopanen, M.
dc.contributor.author Lipsanen, H.
dc.contributor.author Ahopelto, J.
dc.date.accessioned 2018-05-22T14:36:33Z
dc.date.available 2018-05-22T14:36:33Z
dc.date.issued 1996
dc.identifier.citation Sopanen , M , Lipsanen , H & Ahopelto , J 1996 , ' Fabrication of InGaAs quantum disks using self-organized InP islands as a mask in wet chemical etching ' APPLIED PHYSICS LETTERS , vol 69 , no. 26 , pp. 4029-4031 . DOI: 10.1063/1.117860 en
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.other PURE UUID: 57fbf0a0-3c27-44d3-a852-7c0d71bf48a8
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/fabrication-of-ingaas-quantum-disks-using-selforganized-inp-islands-as-a-mask-in-wet-chemical-etching(57fbf0a0-3c27-44d3-a852-7c0d71bf48a8).html
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/14806636/1.117860.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/30917
dc.description.abstract GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well. en
dc.format.extent 3
dc.format.extent 4029-4031
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries APPLIED PHYSICS LETTERS en
dc.relation.ispartofseries Volume 69, issue 26 en
dc.rights openAccess en
dc.title Fabrication of InGaAs quantum disks using self-organized InP islands as a mask in wet chemical etching en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Micro and Nanosciences
dc.subject.keyword optoelectronics
dc.subject.keyword semiconductors
dc.identifier.urn URN:NBN:fi:aalto-201805222357
dc.identifier.doi 10.1063/1.117860
dc.type.version publishedVersion


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