Citation:
Hakala , M H , Foster , A S , Gavartin , J L , Havu , P , Puska , M J & Nieminen , R M 2006 , ' Interfacial oxide growth in silicon/high-k oxide interfaces: First principles modeling of the Si-HfO 2 interface ' , Journal of Applied Physics , vol. 100 , no. 4 , 043708 , pp. 1-7 . https://doi.org/10.1063/1.2259792
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