Vacancy clustering and acceptor activation in nitrogen-implanted ZnO

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Moe Børseth, T.
dc.contributor.author Tuomisto, Filip
dc.contributor.author Christensen, J.S.
dc.contributor.author Monakhov, E.V.
dc.contributor.author Svensson, B.G.
dc.contributor.author Kuznetsov, A.Yu.
dc.date.accessioned 2018-05-22T14:31:42Z
dc.date.available 2018-05-22T14:31:42Z
dc.date.issued 2008-01
dc.identifier.citation Moe Børseth , T , Tuomisto , F , Christensen , J S , Monakhov , E V , Svensson , B G & Kuznetsov , A Y 2008 , ' Vacancy clustering and acceptor activation in nitrogen-implanted ZnO ' Physical Review B , vol 77 , no. 4 , 045204 , pp. 1-6 . DOI: 10.1103/PhysRevB.77.045204 en
dc.identifier.issn 1098-0121
dc.identifier.issn 1550-235X
dc.identifier.other PURE UUID: 2515574c-6504-45a4-9772-d8bbb66e954e
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/vacancy-clustering-and-acceptor-activation-in-nitrogenimplanted-zno(2515574c-6504-45a4-9772-d8bbb66e954e).html
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/13457585/PhysRevB.77.045204.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/30814
dc.description.abstract The role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, and chemical profiling. Room temperature 220keV N implantation using doses in the low 1015cm−2 range induces small and big vacancy clusters containing at least 2 and 3–4 Zn vacancies, respectively. The small clusters are present already in as-implanted samples and remain stable up to 1000°C with no significant effect on the resistivity evolution. In contrast, formation of the big clusters at 600°C is associated with a significant increase in the free electron concentration attributed to gettering of amphoteric Li impurities by these clusters. Further annealing at 800°C results in a dramatic decrease in the free electron concentration correlated with activation of 1016–1017cm−3 acceptors likely to be N and/or Li related. The samples remain n type, however, and further annealing at 1000°C results in passivation of the acceptor states while the big clusters dissociate. en
dc.format.extent 6
dc.format.extent 1-6
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries Physical Review B en
dc.relation.ispartofseries Volume 77, issue 4 en
dc.rights openAccess en
dc.subject.other 114 Physical sciences en
dc.subject.other 221 Nanotechnology en
dc.subject.other 214 Mechanical engineering en
dc.subject.other 218 Environmental engineering en
dc.title Vacancy clustering and acceptor activation in nitrogen-implanted ZnO en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword positron annihilation
dc.subject.keyword SIMS
dc.subject.keyword ZnO
dc.subject.keyword 114 Physical sciences
dc.subject.keyword 221 Nanotechnology
dc.subject.keyword 214 Mechanical engineering
dc.subject.keyword 218 Environmental engineering
dc.identifier.urn URN:NBN:fi:aalto-201805222254
dc.identifier.doi 10.1103/PhysRevB.77.045204
dc.type.version publishedVersion


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