Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Inglese, Alessandro
dc.contributor.author Laine, Hannu
dc.contributor.author Vähänissi, Ville
dc.contributor.author Savin, Hele
dc.date.accessioned 2018-02-09T10:07:16Z
dc.date.available 2018-02-09T10:07:16Z
dc.date.issued 2018
dc.identifier.citation Inglese , A , Laine , H , Vähänissi , V & Savin , H 2018 , ' Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation ' AIP ADVANCES , vol 8 , 015112 . DOI: 10.1063/1.5012680 en
dc.identifier.issn 2158-3226
dc.identifier.other PURE UUID: e1358d70-5238-4724-8096-67d7e20885b9
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/cu-gettering-by-phosphorusdoped-emitters-in-ptype-silicon-effect-on-lightinduced-degradation(e1358d70-5238-4724-8096-67d7e20885b9).html
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/17208665/inglese_et_al_1.5012680.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/30011
dc.description.abstract The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated during device fabrication from the wafer bulk, i.e. the region affected by Cu-LID, to the surface phosphorus-doped emitter. This contribution examines in detail the impact of gettering by industrially relevant phosphorus layers on the strength of Cu-LID effects. We find that phosphorus gettering does not always prevent the occurrence of Cu-LID. Specifically, air-cooling after an isothermal anneal at 800°C results in only weak impurity segregation to the phosphorus-doped layer, which turns out to be insufficient for effectively mitigating Cu-LID effects. Furthermore, we show that the gettering efficiency can be enhanced through the addition of a slow cooling ramp (-4°C/min) between 800°C and 600°C, resulting in the nearly complete disappearance of Cu-LID effects. en
dc.format.extent 7
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries AIP ADVANCES en
dc.relation.ispartofseries Volume 8 en
dc.rights openAccess en
dc.subject.other 216 Materials engineering en
dc.title Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Electronics and Nanoengineering
dc.subject.keyword transition
dc.subject.keyword photodetectors
dc.subject.keyword chemical compounds
dc.subject.keyword doping
dc.subject.keyword heat treatments
dc.subject.keyword 216 Materials engineering
dc.identifier.urn URN:NBN:fi:aalto-201802091508
dc.identifier.doi 10.1063/1.5012680
dc.type.version publishedVersion


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