Black silicon significantly enhances phosphorus diffusion gettering

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Pasanen, Toni P.
dc.contributor.author Laine, Hannu
dc.contributor.author Vähänissi, Ville
dc.contributor.author Schön, Jonas
dc.contributor.author Savin, Hele
dc.date.accessioned 2018-02-09T10:00:18Z
dc.date.available 2018-02-09T10:00:18Z
dc.date.issued 2018-01-31
dc.identifier.citation Pasanen , T P , Laine , H , Vähänissi , V , Schön , J & Savin , H 2018 , ' Black silicon significantly enhances phosphorus diffusion gettering ' , Scientific Reports , vol. 8 , 1991 , pp. 1-6 . https://doi.org/10.1038/s41598-018-20494-y en
dc.identifier.issn 2045-2322
dc.identifier.other PURE UUID: 7d1b5cf5-d4fc-4e99-ad31-4bdfc6e0033b
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/black-silicon-significantly-enhances-phosphorus-diffusion-gettering(7d1b5cf5-d4fc-4e99-ad31-4bdfc6e0033b).html
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/17353724/savin_et_al_s41598_018_20494_y.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/29879
dc.description.abstract Black silicon (b-Si) is currently being adopted by several fields of technology, and its potential has already been demonstrated in various applications. We show here that the increased surface area of b-Si, which has generally been considered as a drawback e.g. in applications that require efficient surface passivation, can be used as an advantage: it enhances gettering of deleterious metal impurities. We demonstrate experimentally that interstitial iron concentration in intentionally contaminated silicon wafers reduces from 1.7 × 1e13 cm−3 to less than 1e10 cm−3 via b-Si gettering coupled with phosphorus diffusion from a POCl3 source. Simultaneously, the minority carrier lifetime increases from less than 2 μs of a contaminated wafer to more than 1.5 ms. A series of different low temperature anneals suggests segregation into the phosphorus-doped layer to be the main gettering mechanism, a notion which paves the way of adopting these results into predictive process simulators. This conclusion is supported by simulations which show that the b-Si needles are entirely heavily-doped with phosphorus after a typical POCl3 diffusion process, promoting iron segregation. Potential benefits of enhanced gettering by b-Si include the possibility to use lower quality silicon in high-efficiency photovoltaic devices. en
dc.format.extent 6
dc.format.extent 1-6
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries Scientific Reports en
dc.relation.ispartofseries Volume 8 en
dc.rights openAccess en
dc.subject.other 216 Materials engineering en
dc.subject.other 221 Nanotechnology en
dc.title Black silicon significantly enhances phosphorus diffusion gettering en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Electronics and Nanoengineering
dc.contributor.department Fraunhofer Institute for Solar Energy Systems
dc.subject.keyword Materials for devices
dc.subject.keyword Semiconductors
dc.subject.keyword Solar energy and photovoltaic technology
dc.subject.keyword 216 Materials engineering
dc.subject.keyword 221 Nanotechnology
dc.identifier.urn URN:NBN:fi:aalto-201802091375
dc.identifier.doi 10.1038/s41598-018-20494-y
dc.type.version publishedVersion


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