Amphoteric Be in GaN

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Tuomisto, Filip
dc.contributor.author Prozheeva, Vera
dc.contributor.author Makkonen, Ilja
dc.contributor.author Myers, Thomas H.
dc.contributor.author Bockowski, Michal
dc.contributor.author Teisseyre, Henryk
dc.date.accessioned 2018-02-09T09:59:01Z
dc.date.available 2018-02-09T09:59:01Z
dc.date.issued 2017-11-09
dc.identifier.citation Tuomisto , F , Prozheeva , V , Makkonen , I , Myers , T H , Bockowski , M & Teisseyre , H 2017 , ' Amphoteric Be in GaN : Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites ' Physical Review Letters , vol 119 , no. 19 , 196404 , pp. 1-5 . DOI: 10.1103/PhysRevLett.119.196404 en
dc.identifier.issn 0031-9007
dc.identifier.issn 1079-7114
dc.identifier.other PURE UUID: 65864950-acde-4dda-ae95-e78995ef7dcd
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/amphoteric-be-in-gan(65864950-acde-4dda-ae95-e78995ef7dcd).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85033561274&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/16139367/PhysRevLett.119.196404.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/29853
dc.description.abstract We show that Be exhibits amphoteric behavior in GaN, involving switching between substitutional and interstitial positions in the lattice. This behavior is observed through the dominance of BeGa in the positron annihilation signals in Be-doped GaN, while the emergence of VGa at high temperatures is a consequence of the Be impurities being driven to interstitial positions. The similarity of this behavior to that found for Na and Li in ZnO suggests that this could be a universal property of light dopants substituting for heavy cations in compound semiconductors. en
dc.format.extent 1-5
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries Physical Review Letters en
dc.relation.ispartofseries Volume 119, issue 19 en
dc.rights openAccess en
dc.subject.other Physics and Astronomy(all) en
dc.subject.other 114 Physical sciences en
dc.title Amphoteric Be in GaN en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.contributor.department Texas State University
dc.contributor.department Polish Academy of Sciences
dc.contributor.department Institute of Physics of the Polish Academy of Sciences
dc.subject.keyword Physics and Astronomy(all)
dc.subject.keyword 114 Physical sciences
dc.identifier.urn URN:NBN:fi:aalto-201802091349
dc.identifier.doi 10.1103/PhysRevLett.119.196404
dc.type.version publishedVersion


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