Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Chávez-Ángel, E.
dc.contributor.author Reparaz, J. S.
dc.contributor.author Gomis-Bresco, J.
dc.contributor.author Wagner, M. R.
dc.contributor.author Cuffe, J.
dc.contributor.author Graczykowski, B.
dc.contributor.author Shchepetov, A.
dc.contributor.author Jiang, H.
dc.contributor.author Prunnila, M.
dc.contributor.author Ahopelto, J.
dc.contributor.author Alzina, F.
dc.contributor.author Sotomayor Torres, C. M.
dc.date.accessioned 2017-11-21T13:37:58Z
dc.date.available 2017-11-21T13:37:58Z
dc.date.issued 2014
dc.identifier.citation Chávez-Ángel , E , Reparaz , J S , Gomis-Bresco , J , Wagner , M R , Cuffe , J , Graczykowski , B , Shchepetov , A , Jiang , H , Prunnila , M , Ahopelto , J , Alzina , F & Sotomayor Torres , C M 2014 , ' Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry ' APL MATERIALS , vol 2 , no. 1 , 012113 , pp. 1-6 . DOI: 10.1063/1.4861796 en
dc.identifier.other PURE UUID: 9e26ab6f-4ae3-4403-93b4-594cefc092d2
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/reduction-of-the-thermal-conductivity-in-freestanding-silicon-nanomembranes-investigated-by-noninvasive-raman-thermometry(9e26ab6f-4ae3-4403-93b4-594cefc092d2).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=84896349744&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/16052319/1.4861796.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/28836
dc.description.abstract We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality. en
dc.format.extent 1-6
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries APL MATERIALS en
dc.relation.ispartofseries Volume 2, issue 1 en
dc.rights openAccess en
dc.subject.other Materials Science(all) en
dc.subject.other Engineering(all) en
dc.subject.other 114 Physical sciences en
dc.subject.other 221 Nanotechnology en
dc.title Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Autonomous University of Barcelona
dc.contributor.department ICN2-Institut Catala de Nanociencia i Nanotecnologia
dc.contributor.department Massachusetts Institute of Technology
dc.contributor.department VTT Technical Research Centre of Finland
dc.contributor.department Department of Applied Physics
dc.contributor.department ICREA
dc.subject.keyword Materials Science(all)
dc.subject.keyword Engineering(all)
dc.subject.keyword 114 Physical sciences
dc.subject.keyword 221 Nanotechnology
dc.identifier.urn URN:NBN:fi:aalto-201711217657
dc.identifier.doi 10.1063/1.4861796
dc.type.version publishedVersion


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