Title: | Vacancy defects in silicon related materials and gallium nitride |
Author(s): | Rummukainen, Mikko |
Date: | 2007-01-12 |
Language: | en |
Pages: | 34, [36] |
Department: | Department of Engineering Physics and Mathematics Teknillisen fysiikan ja matematiikan osasto |
ISBN: | 978-951-22-8572-3 |
Series: | Dissertation / Laboratory of Physics, Helsinki University of Technology, 144 |
ISSN: | 1455-1802 |
Subject: | Physics |
Keywords: | positron annihilation spectroscopy, vacancy defects, gallium nitride, silicon, germanium |
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Abstract:Atomiskaalan virheet vaikuttavat ratkaisevasti puolijohdekomponenttien suorituskykyyn ja laitteiden kestävyyteen. Positroniannihilaatiospektroskopia on erinomainen menetelmä tutkittaessa vakanssityyppisiä virheitä, jotka ovat tyypillisimpiä pistemäisiä virheitä. Tässä työssä positroniannihilaatiospektroskopiaa on hyödynnetty galliumnitridin ja piintyyppisten materiaalien - pii, piigermanium ja germanium - tutkimuksessa. |
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Parts:M. Rummukainen, I. Makkonen, V. Ranki, M. J. Puska, K. Saarinen and H.-J. L. Gossmann, Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy, Physical Review Letters 94, 165501: 1-4 (2005). [article1.pdf] © 2005 American Physical Society. By permission.M. Rummukainen, J. Slotte, K. Saarinen, H. H. Radamson, J. Hållstedt and A. Yu. Kuznetsov, Vacancy-impurity pairs in relaxed Si<sub>1−x</sub>Ge<sub>x</sub> layers studied by positron annihilation spectroscopy, Physical Review B 73, 165209: 1-8 (2006). [article2.pdf] © 2006 American Physical Society. By permission.M. Rummukainen, J. Slotte, F. Tuomisto, V. Markevich and A. R. Peaker, Radiation damage in ion implanted and annealed n-type Ge studied by positron annihilation spectroscopy, Helsinki University of Technology Publications in Engineering Physics, Report TKK-F-A845 (2006). [article3.pdf] © 2006 by authors.E. Tengborn, M. Rummukainen, F. Tuomisto, K. Saarinen, M. Rudzinski, P. R. Hageman, P. K. Larsen and A. Nordlund, Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition, Applied Physics Letters 89, 091905: 1-3 (2006). [article4.pdf] © 2006 American Institute of Physics. By permission.M. Rummukainen, J. Oila, A. Laakso, K. Saarinen, A. J. Ptak and T. H. Myers, Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: the role of growth polarity and stoichiometry, Applied Physics Letters 84, 4887-4889 (2004). [article5.pdf] © 2004 American Institute of Physics. By permission. |
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