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Efficient surface passivation of black silicon using spatial atomic layer deposition

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Heikkinen, Ismo
dc.contributor.author Repo, Päivikki
dc.contributor.author Vähänissi, Ville
dc.contributor.author Pasanen, Toni
dc.contributor.author Malinen, Ville
dc.contributor.author Savin, Hele
dc.date.accessioned 2017-10-15T20:40:44Z
dc.date.available 2017-10-15T20:40:44Z
dc.date.issued 2017-09-21
dc.identifier.citation Heikkinen , I , Repo , P , Vähänissi , V , Pasanen , T , Malinen , V & Savin , H 2017 , ' Efficient surface passivation of black silicon using spatial atomic layer deposition ' , Energy Procedia , vol. 124 , pp. 282–287 . https://doi.org/10.1016/j.egypro.2017.09.300 en
dc.identifier.issn 1876-6102
dc.identifier.other PURE UUID: 8e95c529-a001-469a-a18a-875424f415f0
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/8e95c529-a001-469a-a18a-875424f415f0
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/81032069/1_s2.0_S1876610217342716_main.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/28243
dc.description.abstract Nanostructured silicon surface (black silicon, b-Si) has a great potential in photovoltaic applications, but the large surface area requires efficient passivation. It is well known that b-Si can be efficiently passivated using conformal Atomic Layer Deposited (ALD) Al2O3, but ALD suffers from a low deposition rate. Spatial ALD (SALD) could be a solution as it provides a high deposition rate combined with conformal coating. Here we compare the passivation of b-Si realized with prototype SALD tool Beneq SCS 1000 and temporal ALD. Additionally, we study the effect of post-annealing conditions on the passivation of SALD coated samples. The experiments show that SALD passivates b-Si surfaces well as charge carrier lifetimes up to 1.25 ms are obtained, which corresponds to a surface recombination velocity Seff,max of 10 cm/s. These were comparable with the results obtained with temporal ALD on the same wafers (0.94 ms, Seff,max 14 cm/s). This study thus demonstrates high-quality passivation of b-Si with industrially viable deposition rates. en
dc.format.extent 6
dc.format.extent 282–287
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Elsevier
dc.relation.ispartof International Conference on Crystalline Silicon Photovoltaics en
dc.relation.ispartofseries 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 en
dc.relation.ispartofseries Volume 124 en
dc.relation.ispartofseries Energy Procedia en
dc.rights openAccess en
dc.title Efficient surface passivation of black silicon using spatial atomic layer deposition en
dc.type Conference article fi
dc.description.version Peer reviewed en
dc.contributor.department Beneq Oy
dc.contributor.department Department of Electronics and Nanoengineering
dc.subject.keyword spatial atomic layer deposition
dc.subject.keyword nanostructured silicon
dc.subject.keyword high surface area
dc.subject.keyword surface passivation
dc.subject.keyword conformal coating
dc.subject.keyword aluminum oxide
dc.identifier.urn URN:NBN:fi:aalto-201710157103
dc.identifier.doi 10.1016/j.egypro.2017.09.300
dc.type.version publishedVersion

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