Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Tang, Janika
dc.contributor.author Thakore, Vaibhav
dc.contributor.author Ala-Nissilä, Tapio
dc.date.accessioned 2017-10-15T20:38:22Z
dc.date.available 2017-10-15T20:38:22Z
dc.date.issued 2017
dc.identifier.citation Tang , J , Thakore , V & Ala-Nissilä , T 2017 , ' Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions ' Scientific Reports , vol 7 , no. 1 , 5696 , pp. 1-20 . DOI: 10.1038/s41598-017-05630-4 en
dc.identifier.issn 2045-2322
dc.identifier.other PURE UUID: 532e0e29-efc5-489f-961b-423951b92456
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/plasmonically-enhanced-reflectance-of-heat-radiation-from-lowbandgap-semiconductor-microinclusions(532e0e29-efc5-489f-961b-423951b92456).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85025126937&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/14464763/s41598_017_05630_4.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/28188
dc.description.abstract Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperaturesin the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-Temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics. en
dc.format.extent 1-20
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries Scientific Reports en
dc.relation.ispartofseries Volume 7, issue 1 en
dc.rights openAccess en
dc.subject.other General en
dc.subject.other 114 Physical sciences en
dc.title Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword General
dc.subject.keyword 114 Physical sciences
dc.identifier.urn URN:NBN:fi:aalto-201710157048
dc.identifier.doi 10.1038/s41598-017-05630-4
dc.type.version publishedVersion


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