Effect of N and B doping on the growth of CVD diamond (100):H(2×1) surfaces

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Kaukonen, M.
dc.contributor.author Sitch, P.K.
dc.contributor.author Jungnickel, G.
dc.contributor.author Nieminen, R.M.
dc.contributor.author Pöykkö, S.
dc.contributor.author Porezag, D.
dc.contributor.author Franheim, Th.
dc.date.accessioned 2017-10-13T10:32:46Z
dc.date.available 2017-10-13T10:32:46Z
dc.date.issued 1998
dc.identifier.citation Kaukonen , M , Sitch , P K , Jungnickel , G , Nieminen , R M , Pöykkö , S , Porezag , D & Franheim , T 1998 , ' Effect of N and B doping on the growth of CVD diamond (100):H(2×1) surfaces ' Physical Review B , vol 57 , no. 16 , pp. 9965-9970 . DOI: 10.1103/PhysRevB.57.9965 en
dc.identifier.issn 1550-235X
dc.identifier.other PURE UUID: 3298d5f2-f449-4ca0-8818-231ed427a4b0
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/effect-of-n-and-b-doping-on-the-growth-of-cvd-diamond-100h21-surfaces(3298d5f2-f449-4ca0-8818-231ed427a4b0).html
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/14711260/PhysRevB.57.9965.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/28147
dc.description.abstract The doping of the chemical vapor deposition (CVD)-diamond (100):H(2×1) surface with B and N has been studied using the density-functional tight-binding method. In agreement with recent experimental results, B doping is found to lower the abstraction energies and remove diffusion barriers along the diamond growth pathway proposed by Harris and Goodwin [J. Phys. Chem. 97, 23 (1993)]. In contrast, the Harris-Goodwin mechanism is less favorable with N doping, casting doubt on its validity in this case. We therefore propose a growth pathway on N-doped CVD diamond (100):H(2×1) surfaces. This involves a dimer opening reaction and requires less H abstraction reactions compared to the Harris-Goodwin mechanism. en
dc.format.extent 9965-9970
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries Physical Review B en
dc.relation.ispartofseries Volume 57, issue 16 en
dc.rights openAccess en
dc.title Effect of N and B doping on the growth of CVD diamond (100):H(2×1) surfaces en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics en
dc.identifier.urn URN:NBN:fi:aalto-201710137008
dc.identifier.doi 10.1103/PhysRevB.57.9965
dc.type.version publishedVersion

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