Dual origin of defect magnetism in graphene and its reversible switching by molecular doping

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Nair, R.R.
dc.contributor.author Tsai, I.-L.
dc.contributor.author Sepioni, M.
dc.contributor.author Lehtinen, O.
dc.contributor.author Keinonen, J.
dc.contributor.author Krasheninnikov, A.V.
dc.contributor.author Castro Neto, A.H.
dc.contributor.author Katsnelson, M.I.
dc.contributor.author Geim, A.K.
dc.contributor.author Grigorieva, I.V
dc.date.accessioned 2017-10-13T10:32:30Z
dc.date.available 2017-10-13T10:32:30Z
dc.date.issued 2013
dc.identifier.citation Nair , R R , Tsai , I-L , Sepioni , M , Lehtinen , O , Keinonen , J , Krasheninnikov , A V , Castro Neto , A H , Katsnelson , M I , Geim , A K & Grigorieva , I V 2013 , ' Dual origin of defect magnetism in graphene and its reversible switching by molecular doping ' NATURE COMMUNICATIONS , vol 4 , 2010 , pp. 1-6 . DOI: 10.1038/ncomms3010 en
dc.identifier.issn 2041-1723
dc.identifier.other PURE UUID: 2db17626-fb9f-489a-bafb-ef5fa00adfb6
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/dual-origin-of-defect-magnetism-in-graphene-and-its-reversible-switching-by-molecular-doping(2db17626-fb9f-489a-bafb-ef5fa00adfb6).html
dc.identifier.other PURE LINK: http://www.nature.com/ncomms/2013/130612/ncomms3010/full/ncomms3010.html
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/14820647/ncomms3010.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/28141
dc.description.abstract Control of magnetism by applied voltage is desirable for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and attracts interest because of its weak spin–orbit interaction, the ability to control electronic properties by the electric field effect and the possibility to introduce paramagnetic centres such as vacancies and adatoms. Here we show that the magnetism of adatoms in graphene is itinerant and can be controlled by doping, so that magnetic moments are switched on and off. The much-discussed vacancy magnetism is found to have a dual origin, with two approximately equal contributions; one from itinerant magnetism and the other from dangling bonds. Our work suggests that graphene’s spin transport can be controlled by the field effect, similar to its electronic and optical properties, and that spin diffusion can be significantly enhanced above a certain carrier density. en
dc.format.extent 1-6
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries NATURE COMMUNICATIONS en
dc.relation.ispartofseries Volume 4 en
dc.rights openAccess en
dc.subject.other 114 Physical sciences en
dc.subject.other 221 Nanotechnology en
dc.subject.other 214 Mechanical engineering en
dc.subject.other 218 Environmental engineering en
dc.title Dual origin of defect magnetism in graphene and its reversible switching by molecular doping en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics en
dc.subject.keyword graphene
dc.subject.keyword 114 Physical sciences
dc.subject.keyword 221 Nanotechnology
dc.subject.keyword 214 Mechanical engineering
dc.subject.keyword 218 Environmental engineering
dc.identifier.urn URN:NBN:fi:aalto-201710137002
dc.identifier.doi 10.1038/ncomms3010
dc.type.version publishedVersion

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