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GaAs nanowires grown on Al-doped ZnO buffer layer

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Haggren, Tuomas
dc.contributor.author Pyymaki Perros, Alexander
dc.contributor.author Dhaka, Veer
dc.contributor.author Huhtio, Teppo
dc.contributor.author Jussila, Henri
dc.contributor.author Jiang, Hua
dc.contributor.author Ruoho, Mikko
dc.contributor.author Kakko, Joona-Pekko
dc.contributor.author Kauppinen, Esko
dc.contributor.author Lipsanen, Harri
dc.date.accessioned 2017-10-13T10:24:47Z
dc.date.available 2017-10-13T10:24:47Z
dc.date.issued 2013
dc.identifier.citation Haggren , T , Pyymaki Perros , A , Dhaka , V , Huhtio , T , Jussila , H , Jiang , H , Ruoho , M , Kakko , J-P , Kauppinen , E & Lipsanen , H 2013 , ' GaAs nanowires grown on Al-doped ZnO buffer layer ' , Journal of Applied Physics , vol. 114 , no. 8 , 084309 , pp. 1-7 . https://doi.org/10.1063/1.4819797 en
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.other PURE UUID: 08f83c92-e6b4-4579-a3c2-704fca4b7fb9
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/gaas-nanowires-grown-on-aldoped-zno-buffer-layer(08f83c92-e6b4-4579-a3c2-704fca4b7fb9).html
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/14780062/1.4819797.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/28118
dc.description.abstract We report a pathway to grow GaAs nanowires on a variety of substrates using a combination of atomic layer deposition and metallo-organic vapor phase epitaxy (MOVPE). GaAs nanowires were grown via MOVPE at 430–540 °C on an atomic-layer-deposited Al:ZnO buffer layer. The resulting nanowires were affected only by the properties of the buffer layer, allowing nanowire growth on a number of substrates that withstand ∼400 °C. The growth occurred in two phases: initial in-plane growth and subsequent out-plane growth. The nanowires grown exhibited a strong photoluminescence signal both at room temperature and at 12 K. The 12 K photoluminescence peak was at 1.47 eV, which was attributed to Zn autodoping from the buffer layer. The crystal structure was zincblende plagued with either twin planes or diagonal defect planes, which were related to perturbations in the seed particle during the growth. The used method combines substrates with variable properties to nanowire growth on a transparent and conductive Al:ZnO buffer layer. en
dc.format.extent 7
dc.format.extent 1-7
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries JOURNAL OF APPLIED PHYSICS en
dc.relation.ispartofseries Volume 114, issue 8 en
dc.rights openAccess en
dc.subject.other 114 Physical sciences en
dc.subject.other 213 Electronic, automation and communications engineering, electronics en
dc.subject.other 221 Nanotechnology en
dc.subject.other 216 Materials engineering en
dc.subject.other 214 Mechanical engineering en
dc.subject.other 218 Environmental engineering en
dc.title GaAs nanowires grown on Al-doped ZnO buffer layer en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Micro and Nanosciences
dc.contributor.department Department of Applied Physics
dc.subject.keyword 114 Physical sciences
dc.subject.keyword 213 Electronic, automation and communications engineering, electronics
dc.subject.keyword 221 Nanotechnology
dc.subject.keyword 216 Materials engineering
dc.subject.keyword 214 Mechanical engineering
dc.subject.keyword 218 Environmental engineering
dc.identifier.urn URN:NBN:fi:aalto-201710136979
dc.identifier.doi 10.1063/1.4819797
dc.type.version publishedVersion

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