Design and Analysis of SiGe Millimeter-Wave Radio Front-End MMICs For 5G Communication

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Journal Title
Journal ISSN
Volume Title
Sähkötekniikan korkeakoulu | Master's thesis
Date
2017-08-28
Department
Major/Subject
Micro- and Nanoelectronic Circuit Design
Mcode
ELEC3036
Degree programme
NanoRad - Master’s Programme in Nano and Radio Sciences (TS2013)
Language
en
Pages
59+9
Series
Abstract
This thesis focuses on design and realization of millimeter-wave radio frontend circuits for fifth generation(5G) wireless communication in 0.13um silicongermanium(SiGe) BiCMOS process. Radio front-end includes single-pole doublethrough (SPDT) switch, low noise amplifier (LNA) and buffer amplifier(BA) as a part of radio frequency(RF) transceiver system for E-band. The SPDT switch utilizes the reveres saturated SiGe heterojunction bipolar transistor(HBT). The resulting reverse saturated switch shows an insertion loss of 1 dB , isolation of 26 dB, reflection coefficient better than 25 dB at 75 GHz and provides a bandwidth of 40 GHz. A single to differential ended low noise amplifier(LNA)is designed using transformer balun. Simultaneous noise and impedance matching is used in order to realize both low noise and low reflection at the same time. The post layout simulation of E-band low noise amplifier exhibits a gain and noise figure(NF) of 26 dB and 5.5 dB respectively with a power consumption of 33.5 mW. The buffer amplifier shows a gain of 5.5 dB at 75 GHz. Finally, the receiver achieved a gain of 19.6 dB, noise figure(NF) of 6.9 dB and impedance matching better than 13.5 dB at 75 GHz. A 3 dB bandwidth of more than 12 GHz is achieved from the receiver. Extensive simulation results showing the performance of each circuit of receiver are presented.
Description
Supervisor
Halonen, Kari
Thesis advisor
Parveg, Dristy
Varonen, Mikko
Keywords
MMIC, BiCMOS, reverse-saturation, SPDT, transformer balun, low noise amplifier
Other note
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