Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloys: a real-space view

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Virkkala, V.
dc.contributor.author Havu, V.
dc.contributor.author Tuomisto, F.
dc.contributor.author Puska, M.J.
dc.date.accessioned 2017-06-20T11:28:31Z
dc.date.available 2017-06-20T11:28:31Z
dc.date.issued 2013-07
dc.identifier.citation Virkkala , V , Havu , V , Tuomisto , F & Puska , M J 2013 , ' Origin of band gap bowing in dilute GaAs 1-x N x and GaP 1-x N x alloys: a real-space view ' PHYSICAL REVIEW B , vol 88 , no. 3 , 035204 , pp. 1-6 . DOI: 10.1103/PhysRevB.88.035204 en
dc.identifier.issn 1098-0121
dc.identifier.issn 1550-235X
dc.identifier.other PURE UUID: e1b74158-ccd8-4a11-8532-b65e808ad54a
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/origin-of-band-gap-bowing-in-dilute-gaas1xnx-and-gap1xnx-alloys-a-realspace-view(e1b74158-ccd8-4a11-8532-b65e808ad54a).html
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/13500268/PhysRevB.88.035204.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/27004
dc.description.abstract The origin of the band gap bowing in dilute nitrogen doped gallium based III-V semiconductors is largely debated. In this paper we show the dilute GaAs1−xNx and GaP1−xNx as representative examples that the nitrogen-induced states close to the conduction band minimum propagate along the zigzag chains on the {110} planes. Thereby states originating from different N atoms interact with each other resulting in broadening of the nitrogen-induced states which narrows the band gap. Our modeling based on ab initio theoretical calculations explains the experimentally observed N concentration dependent band gap narrowing both qualitatively and quantitatively. en
dc.format.extent 6
dc.format.extent 1-6
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries PHYSICAL REVIEW B en
dc.relation.ispartofseries Volume 88, issue 3 en
dc.rights openAccess en
dc.subject.other 114 Physical sciences en
dc.subject.other 221 Nanotechnology en
dc.subject.other 214 Mechanical engineering en
dc.subject.other 218 Environmental engineering en
dc.title Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloys: a real-space view en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword band gap
dc.subject.keyword GaAs
dc.subject.keyword GaP
dc.subject.keyword semiconductor
dc.subject.keyword 114 Physical sciences
dc.subject.keyword 221 Nanotechnology
dc.subject.keyword 214 Mechanical engineering
dc.subject.keyword 218 Environmental engineering
dc.identifier.urn URN:NBN:fi:aalto-201706205728
dc.identifier.doi 10.1103/PhysRevB.88.035204
dc.type.version publishedVersion


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