Understanding and control of bipolar self-doping in copper nitride

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Fioretti, Angela N.
dc.contributor.author Schwartz, Craig P.
dc.contributor.author Vinson, John
dc.contributor.author Nordlund, Dennis
dc.contributor.author Prendergast, David
dc.contributor.author Tamboli, Adele C.
dc.contributor.author Caskey, Christopher M.
dc.contributor.author Tuomisto, Filip
dc.contributor.author Linez, Florence
dc.contributor.author Christensen, Steven T.
dc.contributor.author Toberer, Eric S.
dc.contributor.author Lany, Stephan
dc.contributor.author Zakutayev, Andriy
dc.date.accessioned 2017-06-20T11:28:28Z
dc.date.available 2017-06-20T11:28:28Z
dc.date.issued 2016-05-14
dc.identifier.citation Fioretti , A N , Schwartz , C P , Vinson , J , Nordlund , D , Prendergast , D , Tamboli , A C , Caskey , C M , Tuomisto , F , Linez , F , Christensen , S T , Toberer , E S , Lany , S & Zakutayev , A 2016 , ' Understanding and control of bipolar self-doping in copper nitride ' JOURNAL OF APPLIED PHYSICS , vol 119 , no. 18 , 181508 , pp. 1-10 . DOI: 10.1063/1.4948244 en
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.other PURE UUID: dfd75c04-c734-4832-8b05-4dd16869acd5
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/understanding-and-control-of-bipolar-selfdoping-in-copper-nitride(dfd75c04-c734-4832-8b05-4dd16869acd5).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=84973601415&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/13500331/1_2E4948244.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/27003
dc.description.abstract Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu3N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu3N with 1017 electrons/cm3 for low growth temperature (≈35 °C) and p-type with 1015 holes/cm3-1016 holes/cm3 for elevated growth temperatures (50 °C-120 °C). Mobility for both types of Cu3N was ≈0.1 cm2/Vs-1 cm2/Vs. Additionally, temperature-dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that VCu defects form preferentially in p-type Cu3N, while Cui defects form preferentially in n-type Cu3N, suggesting that Cu3N is a compensated semiconductor with conductivity type resulting from a balance between donor and acceptor defects. Based on these theoretical and experimental results, we propose a kinetic defect formation mechanism for bipolar doping in Cu3N that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials and provide a framework that can be applied when considering the properties of such materials in general. en
dc.format.extent 10
dc.format.extent 1-10
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries JOURNAL OF APPLIED PHYSICS en
dc.relation.ispartofseries Volume 119, issue 18 en
dc.rights openAccess en
dc.subject.other Physics and Astronomy(all) en
dc.subject.other 114 Physical sciences en
dc.title Understanding and control of bipolar self-doping in copper nitride en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Colorado School of Mines
dc.contributor.department Fermi National Accelerator Laboratory
dc.contributor.department National Institute of Standards and Technology
dc.contributor.department Lawrence Berkeley National Laboratory
dc.contributor.department Department of Applied Physics
dc.contributor.department National Renewable Energy Laboratory
dc.subject.keyword THIN-FILMS
dc.subject.keyword SEMICONDUCTORS
dc.subject.keyword DEPOSITION
dc.subject.keyword TIN
dc.subject.keyword Physics and Astronomy(all)
dc.subject.keyword 114 Physical sciences
dc.identifier.urn URN:NBN:fi:aalto-201706205727
dc.identifier.doi 10.1063/1.4948244
dc.type.version publishedVersion


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