He implantation induced defects in InN

Linez, F.; Ritt, M.; Rauch, C.; Kilanski, L.; Choi, S.; Speck, J.S.; Räisänen, J.; Tuomisto, F.

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He implantation induced defects in InN

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Title:	He implantation induced defects in InN
Author(s):	Linez, F. ; Ritt, M. ; Rauch, C. ; Kilanski, L. ; Choi, S. ; Speck, J.S. ; Räisänen, J. ; Tuomisto, F.
Date:	2014
Language:	en
Pages:	4 1-4
Department:	Department of Applied Physics
Series:	Journal of Physics: Conference Series, Volume 505, issue 1
ISSN:	1742-6588 1742-6596
DOI-number:	10.1088/1742-6596/505/1/012012
Keywords:	InN, irradiation, positron, vacancy
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This publication is imported from Aalto University Research information portal: https://research.aalto.fi > View this publication in Research information portal > View/Open full text file from Research information portal
Citation: Linez , F , Ritt , M , Rauch , C , Kilanski , L , Choi , S , Speck , J S , Räisänen , J & Tuomisto , F 2014 , ' He implantation induced defects in InN ' , Journal of Physics: Conference Series , vol. 505 , no. 1 , 012012 , pp. 1-4 . https://doi.org/10.1088/1742-6596/505/1/012012
Abstract: InN layers have been implanted with helium at 158 keV at various fluences to study the nature of the generated defects. The defects have been probed using positron annihilation spectroscopy. The first measurements showed that at least two different kinds of defects are created depending of the implantation fluence. The second measurements performed two years later gave different results suggesting that at least one of these defects is not stable at room temperature.

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