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Acceptors in undoped GaSb; the role of vacancy defects

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Kujala, Jiri
dc.contributor.author Slotte, J.
dc.contributor.author Tuomisto, F.
dc.date.accessioned 2017-06-20T11:17:47Z
dc.date.available 2017-06-20T11:17:47Z
dc.date.issued 2013
dc.identifier.citation Kujala , J , Slotte , J & Tuomisto , F 2013 , ' Acceptors in undoped GaSb; the role of vacancy defects ' , Journal of Physics: Conference Series , vol. 443 , no. 1 , 012042 , pp. 1-4 . https://doi.org/10.1088/1742-6596/443/1/012042 en
dc.identifier.issn 1742-6588
dc.identifier.issn 1742-6596
dc.identifier.other PURE UUID: 66d6fa96-edb5-4fc3-815b-34419affe78e
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/acceptors-in-undoped-gasb-the-role-of-vacancy-defects(66d6fa96-edb5-4fc3-815b-34419affe78e).html
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/13452712/Kujala_2013_J._Phys._Conf._Ser._443_012042.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/26964
dc.description.abstract The conventional lifetime setup was used to study Czochralski grown unintentionally p- and n- type ([n] ≈ 6 × 1017cm−3) GaSb bulk samples. Several approaches were used to analyze the data. However, it was not possible to successfully analyze the obtained spectrums with the conventional trapping model. From the analyzed data it was derived that the reason for p-type behavior of GaSb was not VGa. Additionally, the role of gallium vacancy was studied and it's effect to lifetime values are shortly discussed. en
dc.format.extent 4
dc.format.extent 1-4
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries Journal of Physics: Conference Series en
dc.relation.ispartofseries Volume 443, issue 1 en
dc.rights openAccess en
dc.title Acceptors in undoped GaSb; the role of vacancy defects en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword GaSb
dc.subject.keyword positron
dc.identifier.urn URN:NBN:fi:aalto-201706205688
dc.identifier.doi 10.1088/1742-6596/443/1/012042
dc.type.version publishedVersion

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