Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Virkkala, Ville
dc.contributor.author Havu, Ville
dc.contributor.author Tuomisto, Filip
dc.contributor.author Puska, Martti J.
dc.date.accessioned 2017-06-20T11:16:31Z
dc.date.available 2017-06-20T11:16:31Z
dc.date.issued 2013-12-05
dc.identifier.citation Virkkala , V , Havu , V , Tuomisto , F & Puska , M J 2013 , ' Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys ' , Physical Review B , vol. 88 , no. 23 , 235201 , pp. 1-6 . https://doi.org/10.1103/PhysRevB.88.235201 en
dc.identifier.issn 1098-0121
dc.identifier.issn 1550-235X
dc.identifier.other PURE UUID: 3886d98e-7997-4b7c-baa3-53ad45cc5332
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/modeling-biinduced-changes-in-the-electronic-structure-of-gaas-1xbix-alloys(3886d98e-7997-4b7c-baa3-53ad45cc5332).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=84890640452&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/13500262/PhysRevB.88.235201.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/26946
dc.description.abstract We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the ⌠en
dc.format.extent 6
dc.format.extent 1-6
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries PHYSICAL REVIEW B en
dc.relation.ispartofseries Volume 88, issue 23 en
dc.rights openAccess en
dc.subject.other Condensed Matter Physics en
dc.subject.other Electronic, Optical and Magnetic Materials en
dc.title Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword Condensed Matter Physics
dc.subject.keyword Electronic, Optical and Magnetic Materials
dc.identifier.urn URN:NBN:fi:aalto-201706205670
dc.identifier.doi 10.1103/PhysRevB.88.235201
dc.type.version publishedVersion


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