Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

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Title:	Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys
Author(s):	Virkkala, Ville ; Havu, Ville ; Tuomisto, Filip ; Puska, Martti J.
Date:	2013-12-05
Language:	en
Pages:	6 1-6
Department:	Department of Applied Physics
Series:	PHYSICAL REVIEW B, Volume 88, issue 23
ISSN:	1098-0121 1550-235X
DOI-number:	10.1103/PhysRevB.88.235201
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Citation: Virkkala , V , Havu , V , Tuomisto , F & Puska , M J 2013 , ' Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys ' , Physical Review B , vol. 88 , no. 23 , 235201 , pp. 1-6 . https://doi.org/10.1103/PhysRevB.88.235201
Abstract: We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒ

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