Self-compensation in highly n-type InN

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Rauch, C.
dc.contributor.author Tuomisto, F.
dc.contributor.author King, P.D.C.
dc.contributor.author Veal, T.D.
dc.contributor.author Lu, H.
dc.contributor.author Schaff, W.J.
dc.date.accessioned 2017-06-20T11:14:50Z
dc.date.available 2017-06-20T11:14:50Z
dc.date.issued 2012
dc.identifier.citation Rauch , C , Tuomisto , F , King , P D C , Veal , T D , Lu , H & Schaff , W J 2012 , ' Self-compensation in highly n-type InN ' APPLIED PHYSICS LETTERS , vol 101 , no. 1 , 011903 , pp. 1-4 . DOI: 10.1063/1.4732508 en
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.other PURE UUID: 31c5ec7f-7cfa-440d-96f2-909ea83c88b6
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/selfcompensation-in-highly-ntype-inn(31c5ec7f-7cfa-440d-96f2-909ea83c88b6).html
dc.identifier.other PURE LINK: http://dx.doi.org/10.1063/1.4732508
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/13453114/1_2E4732508.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/26942
dc.description.abstract Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples. en
dc.format.extent 4
dc.format.extent 1-4
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries APPLIED PHYSICS LETTERS en
dc.relation.ispartofseries Volume 101, issue 1 en
dc.rights openAccess en
dc.subject.other 114 Physical sciences en
dc.subject.other 221 Nanotechnology en
dc.subject.other 214 Mechanical engineering en
dc.subject.other 218 Environmental engineering en
dc.title Self-compensation in highly n-type InN en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword compensation
dc.subject.keyword defects
dc.subject.keyword Indium nitride
dc.subject.keyword mobility
dc.subject.keyword positron annihilation
dc.subject.keyword 114 Physical sciences
dc.subject.keyword 221 Nanotechnology
dc.subject.keyword 214 Mechanical engineering
dc.subject.keyword 218 Environmental engineering
dc.identifier.urn URN:NBN:fi:aalto-201706205666
dc.identifier.doi 10.1063/1.4732508
dc.type.version publishedVersion


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