Self-compensation in highly n-type InN

Rauch, C.; Tuomisto, F.; King, P.D.C.; Veal, T.D.; Lu, Hai; Schaff, W.J.

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Self-compensation in highly n-type InN

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Title:	Self-compensation in highly n-type InN
Author(s):	Rauch, C. ; Tuomisto, F. ; King, P.D.C. ; Veal, T.D. ; Lu, Hai ; Schaff, W.J.
Date:	2012
Language:	en
Pages:	4 1-4
Department:	Department of Applied Physics
Series:	APPLIED PHYSICS LETTERS, Volume 101, issue 1
ISSN:	0003-6951 1077-3118
DOI-number:	10.1063/1.4732508
Keywords:	compensation, defects, Indium nitride, mobility, positron annihilation
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Citation: Rauch , C , Tuomisto , F , King , P D C , Veal , T D , Lu , H & Schaff , W J 2012 , ' Self-compensation in highly n-type InN ' , Applied Physics Letters , vol. 101 , no. 1 , 011903 , pp. 1-4 . https://doi.org/10.1063/1.4732508
Abstract: Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.

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