Defect evolution and impurity migration in Na implanted ZnO

Neuvonen, P.T.; Vines, L.; Venkatachalapathy, V.; Zubiaga, A.; Tuomisto, F.; Hallén, A.; Svensson, B.G.; Kuznetsov, A.Yu

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Defect evolution and impurity migration in Na implanted ZnO

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Title:	Defect evolution and impurity migration in Na implanted ZnO
Author(s):	Neuvonen, P.T. ; Vines, L. ; Venkatachalapathy, V. ; Zubiaga, A. ; Tuomisto, F. ; Hallén, A. ; Svensson, B.G. ; Kuznetsov, A.Yu
Date:	2011-11
Language:	en
Pages:	7 1-7
Department:	Department of Applied Physics
Series:	PHYSICAL REVIEW B, Volume 84, issue 20
ISSN:	1098-0121 1550-235X
DOI-number:	10.1103/PhysRevB.84.205202
Subject:	114 Physical sciences, 221 Nanotechnology, 214 Mechanical engineering, 218 Environmental engineering
Keywords:	Li, Na, positron, SIMS, ZnO, 114 Physical sciences, 221 Nanotechnology, 214 Mechanical engineering, 218 Environmental engineering
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Citation: Neuvonen , P T , Vines , L , Venkatachalapathy , V , Zubiaga , A , Tuomisto , F , Hallén , A , Svensson , B G & Kuznetsov , A Y 2011 , ' Defect evolution and impurity migration in Na implanted ZnO ' PHYSICAL REVIEW B , vol 84 , no. 20 , 205202 , pp. 1-7 . DOI: 10.1103/PhysRevB.84.205202
Abstract: Secondary ion mass spectrometry (SIMS) and positron annihilation spectroscopy (PAS) have been applied to study impurity migration and open volume defect evolution in Na+ implanted hydrothermally grown ZnO samples. In contrast to most other elements, the presence of Na tends to decrease the concentration of open volume defects upon annealing and for temperatures above 600∘C, Na exhibits trap-limited diffusion correlating with the concentration of Li. A dominating trap for the migrating Na atoms is most likely Li residing on Zn site, but a systematic analysis of the data suggests that zinc vacancies also play an important role in the trapping process.

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